FDS6679Z Fairchild Semiconductor, FDS6679Z Datasheet - Page 4

• Manufacturer Part Number: FDS6679Z
• Description: MOSFET P-CH 30V 13A 8SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r
• Type: Power MOSFETr

Specifications of FDS6679Z

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9 mOhm @ 13A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 13A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 94nC @ 10V
• Input Capacitance (ciss) @ Vds: 3803pF @ 15V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.009Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): 20V
• Drain Current (max): 13A
• Power Dissipation: 2.5W
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC N
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics
0.01
100
0.1
10
10
8
6
4
2
0
1
0.01
Figure 9. Maximum Safe Operating Area.
0
Figure 7. Gate Charge Characteristics.
0.001
0.01
SINGLE PULSE
0.1
R
R
I
0.0001
D
DS(ON)
1
JA
V
T
= -13A
GS
10
A
= 125
= 25
= -10V
LIMIT
o
o
C/W
C
0.1
-V
D = 0.5
0.2
D S
20
0.1
, DRAIN-SOURCE VOLTAGE (V)
0.05
0.02
Q
g
0.01
, GATE CHARGE (nC)
0.001
30
SINGLE PULSE
1
Figure 11. Transient Thermal Response Curve.
DC
40
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
1s
100ms
V
DS
10ms
= -5V
50
0.01
1ms
10
100 s
-15V
60
-10V
100
70
0.1
t
1
, TIME (sec)
5000
4000
3000
2000
1000
50
40
30
20
10
0
0.001
0
Figure 8. Capacitance Characteristics.
0
C
Figure 10. Single Pulse Maximum
1
RSS
0.01
5
-V
Power Dissipation.
C
D S
OSS
, DRAIN TO SOURCE VOLTAGE (V)
0.1
10
10
t
1
, TIME (sec)
1
15
C
ISS
Duty Cycle, D = t
P(pk)
T
R
10
J
R
20
JA
100
- T
JA
(t) = r(t) + R
SINGLE PULSE
R
A
= 125
JA
= P * R
T
t
1
A
= 125°C/W
t
= 25°C
2
FDS6679Z Rev C(W)
100
25
o
C/W
f = 1 MHz
V
GS
JA
1
(t)
= 0 V
JA
/ t
2
1000
1000
30