FDS6679Z Fairchild Semiconductor, FDS6679Z Datasheet - Page 2

• Manufacturer Part Number: FDS6679Z
• Description: MOSFET P-CH 30V 13A 8SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r
• Type: Power MOSFETr

Specifications of FDS6679Z

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 9 mOhm @ 13A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 13A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 94nC @ 10V
• Input Capacitance (ciss) @ Vds: 3803pF @ 15V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.009Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): 20V
• Drain Current (max): 13A
• Power Dissipation: 2.5W
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC N
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Notes:
1. R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
Electrical Characteristics
Symbol
Off Characteristics
BV
I
I
I
On Characteristics
V
R
I
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain–Source Diode Characteristics and Maximum Ratings
I
V
DSS
GSSF
GSSR
D(on)
S
the drain pins. R
d(on)
r
d(off)
f
FS
BV
V
DS(on)
iss
oss
rss
GS(th)
g
gs
gd
SD
JA
DSS
GS(th)
T
T
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
DSS
J
J
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
JC
is guaranteed by design while R
a) 50°C/W (10 sec)
62.5°C/W steady state
when mounted on a
1in
copper
2
Parameter
pad of 2 oz
(Note 2)
(Note 2)
CA
is determined by the user's board design.
T
A
V
I
V
V
V
V
I
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
D
D
= 25°C unless otherwise noted
GS
DS
GS
GS
DS
GS
GS
GS
GS
DS
DS
DD
GS
DS
GS
GS
= –250 A,Referenced to 25 C
= –250 A,Referenced to 25 C
b) 105°C/W when
=–4.5 V, I
= 0 V,
= –24 V, V
= –25 V, V
= 20 V, V
= V
= –10 V, I
= –4.5 V, I
= –4.5 V, V
= –5 V,
= –15 V, V
= –15 V, I
= –10 V, R
= –15 V, I
= –10 V
= 0 V, I
mounted on a .04 in
pad of 2 oz copper
Test Conditions
GS
, I
D
S
= –250 A
D
I
I
D
D
D
D
D
= –2.1 A
=–13A, T
D
GS
DS
DS
DS
= –250 A
= –13 A
GS
GEN
= –13 A,
= –11 A
= –13 A
= –1 A,
= 0 V
= 0 V
= 0 V
= –5 V
2
= 0 V,
= 6
J
=125 C
(Note 2)
Min
–30
–50
–1
c) 125°C/W when mounted on a
–1.7
3803
Typ
–0.7
–22
974
490
minimum pad.
4.9
7.2
10
10
43
18
92
54
67
11
15
9
Max Units
–2.1
–1.2
–10
147
–1
10
–3
13
13
32
18
86
94
9
FDS6679Z Rev C(W)
mV/ C
mV/ C
m
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
V
A
S
A
V
A
A
A