FDS6679Z Fairchild Semiconductor, FDS6679Z Datasheet

MOSFET P-CH 30V 13A 8SOIC

FDS6679Z

Manufacturer Part Number
FDS6679Z
Description
MOSFET P-CH 30V 13A 8SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Type
Power MOSFETr
Datasheet

Specifications of FDS6679Z

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
9 mOhm @ 13A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
13A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
94nC @ 10V
Input Capacitance (ciss) @ Vds
3803pF @ 15V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.009Ohm
Drain-source On-volt
30V
Gate-source Voltage (max)
20V
Drain Current (max)
13A
Power Dissipation
2.5W
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
8
Package Type
SOIC N
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Company
Part Number
Manufacturer
Quantity
Price
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FDS6679Z
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FSC
Quantity:
50 000
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Quantity:
70 000
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Part Number:
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FDS6679Z
30 Volt P-Channel PowerTrench MOSFET
General Description
This
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers, and battery chargers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
D
2001 Fairchild Semiconductor Corporation
DS(ON)
D
J
DSS
GSS
, T
JA
J C
Device Marking
STG
P-Channel
specifications.
FDS6679Z
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
D
D
MOSFET
SO-8
D
D
– Continuous
– Pulsed
FDS6679Z
has
S
Device
Parameter
S
been
S
G
designed
T
A
=25
o
C unless otherwise noted
Reel Size
13’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1a)
(Note 1)
Features
–13 A, –30 V. R
Extended V
ESD protection diode (note 3)
High performance trench technology for extremely
low R
High power and current handling capability
DS(ON)
5
6
8
7
GSS
Tape width
R
range (–25V) for battery applications
DS(ON)
DS(ON)
–55 to +175
12mm
Ratings
–25/+20
–30
–13
–50
2.5
1.2
1.0
50
25
= 9 m @ V
= 13 m @ V
October 2001
GS
1
4
3
2
GS
= –10 V
FDS6679Z Rev C (W)
= – 4.5 V
2500 units
Quantity
Units
C/W
C/W
W
V
V
A
C

Related parts for FDS6679Z

FDS6679Z Summary of contents

Page 1

... Reel Size 13’’ October 2001 = –10 V DS(ON – 4.5 V DS(ON) GS range (–25V) for battery applications GSS Ratings Units –30 V –25/+20 V –13 A –50 2.5 W 1.2 1.0 –55 to +175 C 50 C/W 25 C/W Tape width Quantity 12mm 2500 units FDS6679Z Rev C (W) ...

Page 2

... Min Typ Max Units –30 V –22 mV/ C – – –1 –1.7 –3 V 4.9 mV =125 C – 3803 pF 974 pF 490 147 –2.1 A –0.7 –1.2 V (Note 2) c) 125°C/W when mounted on a minimum pad. FDS6679Z Rev C(W) ...

Page 3

... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. -4.5V -5.0V -6.0V -7.0V -8.0V -10V DRAIN CURRENT ( -6. 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDS6679Z Rev C( 1.2 ...

Page 4

... Figure 10. Single Pulse Maximum 0.01 0 TIME (sec MHz ISS C OSS DRAIN TO SOURCE VOLTAGE ( SINGLE PULSE R = 125°C 25° 100 t , TIME (sec) 1 Power Dissipation. R ( 125 C/W JA P(pk ( Duty Cycle 100 FDS6679Z Rev C(W) 30 1000 1000 ...

Page 5

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...

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