FQB9N50CTM Fairchild Semiconductor, FQB9N50CTM Datasheet - Page 8

• Manufacturer Part Number: FQB9N50CTM
• Description: MOSFET N-CH 500V 9A D2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQB9N50CTM

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 800 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 35nC @ 10V
• Input Capacitance (ciss) @ Vds: 1030pF @ 25V
• Power - Max: 135W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.8 Ohms
• Forward Transconductance Gfs (max / Min): 6.5 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 9 A
• Power Dissipation: 135 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2009 Fairchild Semiconductor Corporation
Mechanical Dimensions
1.27
2.54 TYP
±0.10
10.00
9.90
±0.20
±0.20
2.54 TYP
1.47
0.80
I
±0.10
±0.10
2
-PAK
0.50
+0.10
–0.05
4.50
±0.20
Dimensions in Millimeters
2.40
1.30
±0.20
+0.10
–0.05
Rev. A, Jun 2009