FQB9N50CTM Fairchild Semiconductor, FQB9N50CTM Datasheet

MOSFET N-CH 500V 9A D2PAK

FQB9N50CTM

Manufacturer Part Number
FQB9N50CTM
Description
MOSFET N-CH 500V 9A D2PAK
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheets

Specifications of FQB9N50CTM

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
800 mOhm @ 4.5A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
9A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
35nC @ 10V
Input Capacitance (ciss) @ Vds
1030pF @ 25V
Power - Max
135W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.8 Ohms
Forward Transconductance Gfs (max / Min)
6.5 S
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
9 A
Power Dissipation
135 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FQB9N50CTM
Manufacturer:
FAIRCHILD
Quantity:
8 000
©2009 Fairchild Semiconductor Corporation
FQB9N50C/FQI9N50C
500V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switched mode power supplies,
active power factor correction, electronic lamp ballasts
based on half bridge topology.
Absolute Maximum Ratings
Thermal Characteristics
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
Symbol
DSS
GSS
AS
AR
D
Symbol
, T
JC
JA
JA
STG
G
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
S
D
FQB Series
2
-PAK
D
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
C
Parameter
= 25°C)
Parameter
G
T
C
C
C
D
= 25°C unless otherwise noted
= 25°C)
= 100°C)
S
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
I
FQI Series
Features
• 9 A, 500V, R
• Low gate charge ( typical 28 nC)
• Low Crss ( typical 24 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
2
-PAK
DS(on)
FQB9N50C/FQI9N50C
Typ
--
--
--
-55 to +150
=
13.5
1.07
360
135
300
500
0.8
5.4
4.5
36
9
9
30
G
@V
!
!
Max
0.93
62.5
40
QFET
GS
! "
! "
= 10 V
!
!
!
!
S
D
"
"
"
"
"
"
Units
W/°C
Units
°C/W
°C/W
°C/W
V/ns
mJ
mJ
Rev. A, Jun 2009
°C
°C
W
V
A
A
A
V
A
TM

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FQB9N50CTM Summary of contents

Page 1

... Symbol R Thermal Resistance, Junction-to-Case JC R Thermal Resistance, Junction-to-Ambient * JA R Thermal Resistance, Junction-to-Ambient JA ©2009 Fairchild Semiconductor Corporation Features • 500V, R • Low gate charge ( typical 28 nC) • Low Crss ( typical 24 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability 2 I ...

Page 2

... Repetitive Rating : Pulse width limited by maximum junction temperature mH 9A 50V Starting 9A, di/dt 200A Starting DSS, 4. Pulse Test : Pulse width 300 s, Duty cycle 5. Essentially independent of operating temperature ©2009 Fairchild Semiconductor Corporation T = 25°C unless otherwise noted C Test Conditions 250 250 A, Referenced to 25° 500 400 125° ...

Page 3

... I , Drain Current [A] D Figure 3. On-Resistance Variation vs Drain Current and Gate Voltage 2000 1600 C iss 1200 C oss 800 C rss 400 Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2009 Fairchild Semiconductor Corporation ※ Notes : 1. 250 μ s Pulse Test = 25 ℃ 10V 20V GS ※ Note : ℃ ...

Page 4

... J 3. Single Pulse - Drain-Source Voltage [V] DS Figure 9. Maximum Safe Operating Area Figure 11. Transient Thermal Response Curve ©2009 Fairchild Semiconductor Corporation (Continued) 3.0 2.5 2.0 1.5 1.0 ※ Notes : 0.5 = 250 μ 0.0 -100 100 150 200 o C] Figure 8. On-Resistance Variation 100 s ...

Page 5

... 3mA 3mA 10V 10V Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V ©2009 Fairchild Semiconductor Corporation Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT 10V 10V DUT DUT Resistive Switching Test Circuit & Waveforms DUT ...

Page 6

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2009 Fairchild Semiconductor Corporation + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period ...

Page 7

... Mechanical Dimensions ©2009 Fairchild Semiconductor Corporation PAK Dimensions in Millimeters Rev. A, Jun 2009 ...

Page 8

... Mechanical Dimensions 1.27 ±0.10 2.54 TYP ©2009 Fairchild Semiconductor Corporation 2 I -PAK 9.90 ±0.20 1.47 ±0.10 0.80 ±0.10 2.54 TYP 10.00 ±0.20 4.50 ±0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 –0.05 ±0.20 Dimensions in Millimeters Rev. A, Jun 2009 ...

Page 9

... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. Auto-SPM™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ ...

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