FQB9N50CTM Fairchild Semiconductor, FQB9N50CTM Datasheet - Page 4

• Manufacturer Part Number: FQB9N50CTM
• Description: MOSFET N-CH 500V 9A D2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQB9N50CTM

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 800 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 9A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 35nC @ 10V
• Input Capacitance (ciss) @ Vds: 1030pF @ 25V
• Power - Max: 135W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.8 Ohms
• Forward Transconductance Gfs (max / Min): 6.5 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 9 A
• Power Dissipation: 135 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2009 Fairchild Semiconductor Corporation
Typical Characteristics
10
10
10
10
1.2
1.1
1.0
0.9
0.8
Figure 9. Maximum Safe Operating Area
-1
2
1
0
-100
Figure 7. Breakdown Voltage Variation
10
0
-50
T
V
Operation in This Area
is Limited by R
vs Temperature
J
DS
, Junction Temperature [
10
, Drain-Source Voltage [V]
1 0
1 0
0
1 0
1
- 1
- 2
0
1 0
- 5
DS(on)
D = 0 . 5
0 . 1
0 . 0 5
0 . 2
0 . 0 2
0 . 0 1
※ Notes :
50
1. T
2. T
3. Single Pulse
DC
C
J
= 150
= 25
Figure 11. Transient Thermal Response Curve
100 ms
o
C
o
10 ms
C
(Continued)
10
1 0
100
s in g le p u ls e
2
o
- 4
C]
1 ms
※ Notes :
t
1. V
2. I
1
100 s
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
D
GS
= 250 μ A
150
= 0 V
10 s
1 0
- 3
200
10
3
1 0
- 2
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
8
6
4
2
0
25
-100
Figure 10. Maximum Drain Current
※ N o t e s :
1 0
Figure 8. On-Resistance Variation
1 . Z
2 . D u t y F a c t o r , D = t
3 . T
- 1
θ J C
J M
P
-50
DM
( t ) = 0 . 9 3 ℃ / W M a x .
- T
50
vs Case Temperature
C
= P
T
T
D M
vs Temperature
1 0
J
C
, Junction Temperature [
t
1
, Case Temperature [ ℃ ]
0
* Z
t
0
2
1
75
/ t
θ J C
2
( t )
50
1 0
100
1
100
o
C]
125
※ Notes :
1. V
2. I
150
D
GS
= 4.5 A
= 10 V
150
200
Rev. A, Jun 2009