FDD8444 Fairchild Semiconductor, FDD8444 Datasheet - Page 6
![MOSFET N-CH 40V 145A DPAK](/photos/5/57/55764/fdd8444_sml.jpg)
FDD8444
Manufacturer Part Number
FDD8444
Description
MOSFET N-CH 40V 145A DPAK
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDD8444.pdf
(7 pages)
Specifications of FDD8444
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5.2 mOhm @ 50A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
145A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
116nC @ 10V
Input Capacitance (ciss) @ Vds
6195pF @ 25V
Power - Max
153W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0094 Ohm @ 10 V
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
145 A
Power Dissipation
153000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
17.5A
Drain Source Voltage Vds
40V
On Resistance Rds(on)
5.2mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
2.5V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDD8444TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDD8444
Manufacturer:
FAIRCHILD
Quantity:
30 000
Part Number:
FDD8444
Manufacturer:
FSC进口
Quantity:
20 000
Company:
Part Number:
FDD8444L
Manufacturer:
FSC
Quantity:
2 809
Part Number:
FDD8444L
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FDD8444 Rev B (W)
Typical Characteristics
Figure 11. Normalized Gate Threshold Voltage vs
10000
Figure 13. Capacitance vs Drain to Source
1000
100
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.1
-80
f = 1MHz
V
GS
= 0V
-40
T
V
Junction Temperature
J
DS
, JUNCTION TEMPERATURE
, DRAIN TO SOURCE VOLTAGE
0
Voltage
1
40
C
rss
80
C
oss
C
iss
120
(
10
o
C
V
I
D
)
GS
= 250 μ
160
(
V
=
)
V
DS
A
200
40
6
Figure 14. Gate Charge vs Gate to Source Voltage
Breakdown Voltage vs Junction Temperature
10
1.15
1.10
1.05
1.00
0.95
0.90
Figure 12. Normalized Drain to Source
8
6
4
2
0
0
-80
I
D
= 50A
I
D
= 250
-40
20
T
J
μ
, JUNCTION TEMPERATURE
A
Q
V
g
DD
, GATE CHARGE(nC)
0
= 20V
40
V
40
DD
= 15V
60
80
V
120
www.fairchildsemi.com
DD
= 25V
80
(
o
C
160
)
100
200