FDD8444 Fairchild Semiconductor, FDD8444 Datasheet - Page 6

• Manufacturer Part Number: FDD8444
• Description: MOSFET N-CH 40V 145A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDD8444

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5.2 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 145A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 116nC @ 10V
• Input Capacitance (ciss) @ Vds: 6195pF @ 25V
• Power - Max: 153W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0094 Ohm @ 10 V
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 145 A
• Power Dissipation: 153000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 17.5A
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 5.2mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 2.5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDD8444TR

FDD8444 Rev B (W)
Typical Characteristics
Figure 11. Normalized Gate Threshold Voltage vs
10000
Figure 13. Capacitance vs Drain to Source
1000
100
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.1
-80
f = 1MHz
V
GS
= 0V
-40
T
V
Junction Temperature
J
DS
, JUNCTION TEMPERATURE
, DRAIN TO SOURCE VOLTAGE
0
Voltage
1
40
C
rss
80
C
oss
C
iss
120
(
10
o
C
V
I
D
)
GS
= 250 μ
160
(
V
=
)
V
DS
A
200
40
6
Figure 14. Gate Charge vs Gate to Source Voltage
Breakdown Voltage vs Junction Temperature
10
1.15
1.10
1.05
1.00
0.95
0.90
Figure 12. Normalized Drain to Source
8
6
4
2
0
0
-80
I
D
= 50A
I
D
= 250
-40
20
T
J
μ
, JUNCTION TEMPERATURE
A
Q
V
g
DD
, GATE CHARGE(nC)
0
= 20V
40
V
40
DD
= 15V
60
80
V
120
www.fairchildsemi.com
DD
= 25V
80
(
o
C
160
)
100
200