FDD8444 Fairchild Semiconductor, FDD8444 Datasheet - Page 5

• Manufacturer Part Number: FDD8444
• Description: MOSFET N-CH 40V 145A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDD8444

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5.2 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 145A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 116nC @ 10V
• Input Capacitance (ciss) @ Vds: 6195pF @ 25V
• Power - Max: 153W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0094 Ohm @ 10 V
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 145 A
• Power Dissipation: 153000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 17.5A
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 5.2mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 2.5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDD8444TR

FDD8444 Rev B (W)
Typical Characteristics
Figure 5. Forward Bias Safe Operating Area
1000
100
Figure 9. Drain to Source On-Resistance
0.1
100
10
80
60
40
20
1
14
12
10
0
Variation vs Gate to Source Voltage
2.0
8
6
4
2
1
Figure 7. Transfer Characteristics
4
OPERATION IN THIS
AREA MAY BE
LIMITED BY r DS(on)
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
V
CURRENT LIMITED
BY PACKAGE
DD
V
= 5V
DS
V
V
2.5
GS
, DRAIN TO SOURCE VOLTAGE (V)
GS
5
, GATE TO SOURCE VOLTAGE (V)
, GATE TO SOURCE VOLTAGE
I
D
=
3.0
50A
6
SINGLE PULSE
T
T
J
C
T
= MAX RATED
= 25
J
T
= 25
J
μ
= 175
o
10
s
3.5
C
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
o
7
C
o
C
4.0
T
8
J
T
= 25
J
= 175
o
T
4.5
C
J
10us
10ms
100us
(
1ms
o
9
= -55
DC
V
C
)
μ
o
s
C
100
5.0
10
5
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 10. Normalized Drain to Source On
500
100
Figure 6. Unclamped Inductive Switching
100
10
80
60
40
20
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.01
1
0
Resistance vs Junction Temperature
0.0
Figure 8. Saturation Characteristics
-80
If R = 0
t
If R ≠ 0
t
AV
AV
STARTING T
V
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
GS
= (L)(I
= (L/R)ln[(I
V
= 10V
DS
-40
0.1
0.3
, DRAIN TO SOURCE VOLTAGE (V)
T
AS
J
, JUNCTION TEMPERATURE
)/(1.3*RATED BV
t
AV
AS
J
, TIME IN AVALANCHE (ms)
= 150
0
*R)/(1.3*RATED BV
Capability
V
0.6
1
o
GS
C
40
= 5V
STARTING T
PULSE DURATION = 80
DUTY CYCLE = 0.5% MAX
μ
DSS
s
10
0.9
80
- V
DD
DSS
)
J
- V
120
www.fairchildsemi.com
= 25
DD
100
V
V
1.2
GS
V
I
D
) +1]
GS
o
(
GS
C
o
= 50A
C
= 4.5V
= 10V
160
= 4V
)
μ
s
1000
1.5
200