FDD8444 Fairchild Semiconductor, FDD8444 Datasheet - Page 2

• Manufacturer Part Number: FDD8444
• Description: MOSFET N-CH 40V 145A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDD8444

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5.2 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 145A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 116nC @ 10V
• Input Capacitance (ciss) @ Vds: 6195pF @ 25V
• Power - Max: 153W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0094 Ohm @ 10 V
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 145 A
• Power Dissipation: 153000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 17.5A
• Drain Source Voltage Vds: 40V
• On Resistance Rds(on): 5.2mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 2.5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDD8444TR

FDD8444 Rev B (W)
Package Marking and Ordering Information
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
MOSFET Maximum Ratings
Thermal Characteristics
B
I
I
V
r
C
C
C
R
Q
Q
Q
Q
Q
Q
V
V
I
E
P
T
R
R
Symbol
DSS
GSS
DS(on)
Symbol
D
J
VDSS
GS(th)
DSS
GS
AS
D
iss
oss
rss
G
θJC
θJA
Device Marking
g(TOT)
g(5)
g(TH)
gs
gs2
gd
, T
STG
FDD8444
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient TO-252, 1in
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous (V
Continuous (V
Pulsed
Single Pulse Avalanche Energy
Power Dissipation
Derate above 25
Operating and Storage Temperature
Gate to Source Threshold Voltage
Drain to Source On Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge at 10V
Total Gate Charge at 5V
Threshold Gate Charge
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller“ Charge
GS
FDD8444
Parameter
Device
o
= 10V, with R
C
GS
T
θJA
= 10V)
J
Parameter
TO-252AA
= 25°C unless otherwise noted
Package
T
= 52
C
= 25°C unless otherwise noted
o
C/W)
V
f = 1MHz
f = 1MHz
V
V
V
V
I
I
T
I
V
V
V
D
D
D
J
DS
GS
GS
GS
GS
DS
GS
GS
= 250μA, V
= 50A, V
= 50A, V
= 175
= 25V, V
= 0 to 10V
= 0 to 5V
= 0 to 2V
= 32V
= V
= 0V
= ±20V
Test Conditions
DS
2
o
C
, I
Reel Size
GS
GS
D
2
GS
GS
= 10V
= 10V,
copper pad area
13”
= 250μA
= 0V
= 0V,
V
I
I
T
D
g
DD
J
= 1.0mA
= 50A
= 150
= 20V
(Note 1)
(Note 2)
o
C
Tape Width
12mm
Min
40
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-55 to +175
Ratings
Figure 4
6195
0.98
585
332
Typ
1.02
1.9
2.5
7.2
±20
153
89
43
23
20
145
535
52
11
11
40
20
4
-
-
-
-
www.fairchildsemi.com
2500 units
±100
14.3
Quantity
Max
250
116
5.2
9.4
56
1
-
-
-
-
4
-
-
-
-
Units
o
o
Units
W/
μA
nA
mΩ
nC
nC
nC
nC
nC
nC
C/W
C/W
pF
pF
pF
Ω
mJ
V
o
W
V
V
V
A
C
o
C