FQB22P10TM Fairchild Semiconductor, FQB22P10TM Datasheet - Page 4
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FQB22P10TM
Manufacturer Part Number
FQB22P10TM
Description
MOSFET P-CH 100V 22A D2PAK
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Specifications of FQB22P10TM
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
125 mOhm @ 11A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
22A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
50nC @ 10V
Input Capacitance (ciss) @ Vds
1500pF @ 25V
Power - Max
3.75W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.125 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
13.5 S
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
22 A
Power Dissipation
3750 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
22A
Drain Source Voltage Vds
100V
On Resistance Rds(on)
96mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
-4V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FQB22P10TM
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FQB22P10TM
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FQB22P10TM_F085
Manufacturer:
Fairchild Semiconductor
Quantity:
135
©2008 Fairchild Semiconductor Corporation
Typical Characteristics
1.2
1.1
1.0
0.9
0.8
10
10
10
10
-100
Figure 9. Maximum Safe Operating Area
-1
2
1
0
10
Figure 7. Breakdown Voltage Variation
0
-50
-V
T
vs. Temperature
J
, Junction Temperature [
DS
Operation in This Area
is Limited by R
0
, Drain-Source Voltage [V]
※ Notes :
1 0
1 0
1 0
1. T
2. T
3. Single Pulse
- 1
- 2
1 0
0
C
J
= 175
= 25
10
- 5
1
o
D = 0 .5
0 .0 2
0 .0 1
DS(on)
0 .0 5
C
50
o
0 .2
0 .1
C
DC
Figure 11. Transient Thermal Response Curve
10 ms
100
1 0
(Continued)
o
1 ms
C]
- 4
s i n g l e p u ls e
※ Notes :
1. V
2. I
t
1
100 s
D
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
G S
= -250 μ A
= 0 V
150
10
2
1 0
- 3
200
1 0
- 2
2.5
2.0
1.5
1.0
0.5
0.0
-100
25
20
15
10
5
0
25
※ N o te s :
Figure 8. On-Resistance Variation
1 0
Figure 10. Maximum Drain Current
1 . Z
2 . D u ty F a c to r , D = t
3 . T
- 1
P
-50
θ J C
J M
DM
50
- T
( t) = 1 .2 ℃ /W M a x .
vs. Case Temperature
C
= P
T
vs. Temperature
J
T
t
, Junction Temperature [
1
C
D M
0
75
t
1 0
, Case Temperature [ ℃ ]
2
* Z
0
1
/t
θ J C
2
( t)
100
50
1 0
1
100
125
o
C]
※ Notes :
1. V
2. I
150
150
D
GS
= -11 A
= -10 V
Rev. C1, Oct 2008
175
200