FQB22P10TM Fairchild Semiconductor, FQB22P10TM Datasheet - Page 2

• Manufacturer Part Number: FQB22P10TM
• Description: MOSFET P-CH 100V 22A D2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQB22P10TM

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 125 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 22A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 50nC @ 10V
• Input Capacitance (ciss) @ Vds: 1500pF @ 25V
• Power - Max: 3.75W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.125 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 13.5 S
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 22 A
• Power Dissipation: 3750 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 22A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 96mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: -4V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FQB22P10TM

©2008 Fairchild Semiconductor Corporation
Electrical Characteristics
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 2.2mH, I
3. I
4. Pulse Test : Pulse width ≤ 300 s, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Off Characteristics
BV
/
I
I
I
On Characteristics
V
R
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain-Source Diode Characteristics and Maximum Ratings
I
I
V
t
Q
Symbol
DSS
GSSF
GSSR
d(on)
r
d(off)
f
S
SM
rr
SD
FS
BV
GS(th)
SD
DS(on)
iss
oss
rss
g
gs
gd
rr
DSS
≤ -22A, di/dt ≤ 300A/ s, V
T
DSS
J
AS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
= -22A, V
DD
= -25V, R
DD
Parameter
≤ BV
G
= 25
DSS,
Starting T
Starting T
J
T
= 25°C
J
C
= 25°C
= 25°C unless otherwise noted
V
I
V
V
V
V
V
V
V
V
f = 1.0 MHz
V
R
V
V
V
V
dI
D
GS
DS
DS
GS
GS
DS
GS
DS
DS
DD
DS
GS
GS
GS
G
F
= -250 A, Referenced to 25°C
/ dt = 100 A/ s
= 25
= -100 V, V
= -80 V, T
= V
= -40 V, I
= -25 V, V
= -80 V, I
= 0 V, I
= -30 V, V
= 30 V, V
= -10 V, I
= -50 V, I
= -10 V
= 0 V, I
= 0 V, I
Test Conditions
GS
, I
D
S
S
D
= -250 A
D
D
= -22 A
= -22 A,
D
D
DS
C
= -250 A
GS
DS
= -11 A
= -22 A,
GS
= -11 A
= -22 A,
= 125°C
= 0 V
= 0 V
= 0 V,
= 0 V
(Note 4, 5)
(Note 4, 5)
(Note 4)
(Note 4)
-100
Min
-2.0
--
--
--
--
--
--
--
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--
--
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--
--
--
--
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--
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--
0.096
1170
13.5
Typ
-0.1
460
160
170
110
110
7.0
0.6
17
60
40
21
--
--
--
--
--
--
--
--
--
0.125
1500
Max
-100
100
-4.0
600
200
350
130
230
-4.0
-10
-22
-88
45
50
-1
--
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Rev. C1, Oct 2008
Units
V/°C
nC
nC
nC
nA
nA
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
A
A
V
A
A
C