FQB22P10TM Fairchild Semiconductor, FQB22P10TM Datasheet - Page 3
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FQB22P10TM
Manufacturer Part Number
FQB22P10TM
Description
MOSFET P-CH 100V 22A D2PAK
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Specifications of FQB22P10TM
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
125 mOhm @ 11A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
22A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
50nC @ 10V
Input Capacitance (ciss) @ Vds
1500pF @ 25V
Power - Max
3.75W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.125 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
13.5 S
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
22 A
Power Dissipation
3750 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
22A
Drain Source Voltage Vds
100V
On Resistance Rds(on)
96mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
-4V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FQB22P10TM
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FQB22P10TM
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FQB22P10TM_F085
Manufacturer:
Fairchild Semiconductor
Quantity:
135
©2008 Fairchild Semiconductor Corporation
Typical Characteristics
3500
3000
2500
2000
1500
1000
500
10
10
0.5
0.4
0.3
0.2
0.1
0.0
0
1
0
10
10
0
-1
-1
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
Top :
Bottom : -4.5 V
Figure 1. On-Region Characteristics
10
Drain Current and Gate Voltage
-15.0 V
-10.0 V
-8.0 V
-7.0 V
-6.0 V
-5.5 V
-5.0 V
V
GS
C
20
C
C
iss
oss
rss
-V
-V
30
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
-I
10
D
10
, Drain Current [A]
0
40
0
50
V
GS
= - 20V
V
GS
60
= - 10V
C
C
C
iss
oss
rss
70
※ Notes :
= C
= C
= C
1. 250μ s Pulse Test
2. T
10
※ Note : T
gs
ds
gd
1
10
C
+ C
+ C
= 25℃
1
80
gd
gd
※ Notes :
(C
1. V
2. f = 1 MHz
J
ds
= 25℃
= shorted)
GS
90
= 0 V
100
10
10
10
10
10
10
12
10
-1
1
0
-1
8
6
4
2
0
1
0
0.2
2
0
Figure 6. Gate Charge Characteristics
Figure 4. Body Diode Forward Voltage
25℃
0.4
Figure 2. Transfer Characteristics
Figure 2. Transfer Characteristics
175℃
175℃
Variation vs. Source Current
0.6
10
25℃
0.8
4
-V
-V
Q
and Temperature
GS
SD
V
1.0
G
DS
, Total Gate Charge [nC]
, Gate-Source Voltage [V]
, Source-Drain Voltage [V]
V
= -80V
DS
V
-55℃
20
1.2
= -50V
DS
= -20V
1.4
6
1.6
30
1.8
※ Notes :
※ Notes :
1. V
2. 250μ s Pulse Test
1. V
2. 250μ s Pulse Test
2.0
※ Note : I
8
DS
GS
= -40V
= 0V
40
2.2
D
= -22 A
2.4
Rev. C1, Oct 2008
2.6
50
10