FQB22P10TM Fairchild Semiconductor, FQB22P10TM Datasheet - Page 3

• Manufacturer Part Number: FQB22P10TM
• Description: MOSFET P-CH 100V 22A D2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQB22P10TM

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 125 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 22A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 50nC @ 10V
• Input Capacitance (ciss) @ Vds: 1500pF @ 25V
• Power - Max: 3.75W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.125 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 13.5 S
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 22 A
• Power Dissipation: 3750 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 22A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 96mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: -4V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FQB22P10TM

©2008 Fairchild Semiconductor Corporation
Typical Characteristics
3500
3000
2500
2000
1500
1000
500
10
10
0.5
0.4
0.3
0.2
0.1
0.0
0
1
0
10
10
0
-1
-1
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
Top :
Bottom : -4.5 V
Figure 1. On-Region Characteristics
10
Drain Current and Gate Voltage
-15.0 V
-10.0 V
-8.0 V
-7.0 V
-6.0 V
-5.5 V
-5.0 V
V
GS
C
20
C
C
iss
oss
rss
-V
-V
30
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
-I
10
D
10
, Drain Current [A]
0
40
0
50
V
GS
= - 20V
V
GS
60
= - 10V
C
C
C
iss
oss
rss
70
※ Notes :
= C
= C
= C
1. 250μ s Pulse Test
2. T
10
※ Note : T
gs
ds
gd
1
10
C
+ C
+ C
= 25℃
1
80
gd
gd
※ Notes :
(C
1. V
2. f = 1 MHz
J
ds
= 25℃
= shorted)
GS
90
= 0 V
100
10
10
10
10
10
10
12
10
-1
1
0
-1
8
6
4
2
0
1
0
0.2
2
0
Figure 6. Gate Charge Characteristics
Figure 4. Body Diode Forward Voltage
25℃
0.4
Figure 2. Transfer Characteristics
Figure 2. Transfer Characteristics
175℃
175℃
Variation vs. Source Current
0.6
10
25℃
0.8
4
-V
-V
Q
and Temperature
GS
SD
V
1.0
G
DS
, Total Gate Charge [nC]
, Gate-Source Voltage [V]
, Source-Drain Voltage [V]
V
= -80V
DS
V
-55℃
20
1.2
= -50V
DS
= -20V
1.4
6
1.6
30
1.8
※ Notes :
※ Notes :
1. V
2. 250μ s Pulse Test
1. V
2. 250μ s Pulse Test
2.0
※ Note : I
8
DS
GS
= -40V
= 0V
40
2.2
D
= -22 A
2.4
Rev. C1, Oct 2008
2.6
50
10