HUFA75429D3ST Fairchild Semiconductor, HUFA75429D3ST Datasheet - Page 2

• Manufacturer Part Number: HUFA75429D3ST
• Description: MOSFET N-CH 60V 20A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: UltraFET™r

Specifications of HUFA75429D3ST

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 25 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 85nC @ 20V
• Input Capacitance (ciss) @ Vds: 1090pF @ 25V
• Power - Max: 125W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.021 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 20 A
• Power Dissipation: 125 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Fall Time: 33 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 39 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2003 Fairchild Semiconductor Corporation
Package Marking and Ordering Information
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Notes:
1: Starting T
B
I
I
V
r
C
C
C
Q
Q
Q
Q
Q
t
t
t
t
t
t
V
t
Q
DSS
GSS
ON
d(ON)
r
d(OFF)
f
OFF
rr
DS(ON)
GS(TH)
VDSS
SD
ISS
OSS
RSS
g(TOT)
g(10)
g(TH)
gs
gd
RR
Symbol
Device Marking
75429D
75429D
J
= 25°C, L = 1.56mH, I
Drain to Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Drain to Source On Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 20V
Total Gate Charge at 10V
Threshold Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovered Charge
AS
HUFA75429D3ST
HUFA75429D3S
Parameter
= 20A
Device
(V
GS
= 10V)
T
A
= 25°C unless otherwise noted
Package
TO-252
TO-252
I
V
V
V
V
V
I
I
T
V
f = 1MHz
V
V
V
V
V
I
I
I
I
D
D
D
SD
SD
SD
SD
GS
GS
J
GS
GS
GS
DS
DS
GS
DS
DD
GS
= 250 A, V
= 20A, V
= 20A, V
= 175
= 20A
= 10A
= 20A, dI
= 20A, dI
= 55V, V
= 45V
= 0V
= 20V
= 25V, V
= 0V to 20V
= 0V to 10V
= 0V to 2V
= V
= 30V, I
= 10V, R
Test Conditions
DS
o
C
, I
GS
GS
D
D
SD
SD
GS
GS
GS
GS
= 20A
= 250 A
= 10V
= 10V,
Reel Size
/dt = 100A/ s
/dt = 100A/ s
330mm
= 0V
= 0V,
= 0V
= 11
Tube
V
I
I
T
D
g
DD
C
= 1.0mA
= 20A
= 150
= 30V
o
C
Tape Width
Min
60
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
16mm
N/A
0.021
0.043
1090
376
102
Typ
65
36
14
10
39
52
33
2
4
-
-
-
-
-
-
-
-
-
-
-
0.025
0.054
Max
1.25
128
250
2.6
1.0
85
47
100
74
55
83
2500 units
4
1
-
-
-
-
-
Quantity
-
-
-
-
-
75 units
Units
nC
nC
nC
nC
nC
pF
pF
pF
nC
nA
ns
ns
ns
ns
ns
ns
ns
V
V
V
V
A
Rev. A1