HUFA75429D3ST Fairchild Semiconductor, HUFA75429D3ST Datasheet - Page 10

• Manufacturer Part Number: HUFA75429D3ST
• Description: MOSFET N-CH 60V 20A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: UltraFET™r

Specifications of HUFA75429D3ST

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 25 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 85nC @ 20V
• Input Capacitance (ciss) @ Vds: 1090pF @ 25V
• Power - Max: 125W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.021 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 20 A
• Power Dissipation: 125 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Fall Time: 33 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 39 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2003 Fairchild Semiconductor Corporation
SPICE Thermal Model
REV 23 February 2002
HUFA75429D3S
CTHERM1 TH 6 2.49e-3
CTHERM2 6 5 7.6e-3
CTHERM3 5 4 7.8e-3
CTHERM4 4 3 8e-3
CTHERM5 3 2 1.3e-2
CTHERM6 2 TL 7.52e-2
RTHERM1 TH 6 6e-3
RTHERM2 6 5 1.4e-2
RTHERM3 5 4 9e-2
RTHERM4 4 3 1.8e-1
RTHERM5 3 2 3.1e-1
RTHERM6 2 TL 3.35e-1
SABER Thermal Model
SABER thermal model HUFA75429D3S
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 =2.49e-3
ctherm.ctherm2 6 5 =7.6e-3
ctherm.ctherm3 5 4 =7.8e-3
ctherm.ctherm4 4 3 =8e-3
ctherm.ctherm5 3 2 =1.3e-2
ctherm.ctherm6 2 tl =7.52e-2
rtherm.rtherm1 th 6 =6e-3
rtherm.rtherm2 6 5 =1.4e-2
rtherm.rtherm3 5 4 =9e-2
rtherm.rtherm4 4 3 =1.8e-1
rtherm.rtherm5 3 2 =3.1e-1
rtherm.rtherm6 2 tl =3.35e-1
}
RTHERM5
RTHERM2
RTHERM3
RTHERM6
RTHERM1
RTHERM4
th
5
4
3
2
tl
6
JUNCTION
CASE
CTHERM5
CTHERM2
CTHERM1
CTHERM3
CTHERM4
CTHERM6
Rev. A1