FQU2N90TU_WS Fairchild Semiconductor, FQU2N90TU_WS Datasheet - Page 79
![MOSFET N-CH 900V 1.7A IPAK](/photos/5/60/56062/dpak_369d___01_sml.jpg)
FQU2N90TU_WS
Manufacturer Part Number
FQU2N90TU_WS
Description
MOSFET N-CH 900V 1.7A IPAK
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet
1.SFU9220TU_F080.pdf
(214 pages)
Specifications of FQU2N90TU_WS
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
7.2 Ohm @ 850mA, 10V
Drain To Source Voltage (vdss)
900V
Current - Continuous Drain (id) @ 25° C
1.7A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
15nC @ 10V
Input Capacitance (ciss) @ Vds
500pF @ 25V
Power - Max
2.5W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
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Application Specific MOSFET Drivers
FDG901D
FDC6901L
SC70-5
SuperSOT-6/TSOP-6
Products
P-Channel Slew Rate Control Driver
Integrated Driver & Load Switch
Function
Polarity
P-Channel
P-Channel
Configuration
Single Integrated
Discrete Power Products –
Single
2-74
V
Operating Voltage
DD
2.7
2.7
Min
Range
V
DD
6
6
Max
Application Specific MOSFET Drivers
I
LOAD
0.00012
(A)
3
Typ
t
rise
(µs)
124
28
Typ
t
fall
(µs)
–
–
Typ
P
D
0.15
1.6
(W)
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