FQU2N90TU_WS Fairchild Semiconductor, FQU2N90TU_WS Datasheet - Page 79

• Manufacturer Part Number: FQU2N90TU_WS
• Description: MOSFET N-CH 900V 1.7A IPAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQU2N90TU_WS

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7.2 Ohm @ 850mA, 10V
• Drain To Source Voltage (vdss): 900V
• Current - Continuous Drain (id) @ 25° C: 1.7A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 500pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Application Specific MOSFET Drivers
FDG901D
FDC6901L
SC70-5
SuperSOT-6/TSOP-6
Products
P-Channel Slew Rate Control Driver
Integrated Driver & Load Switch
Function
Polarity
P-Channel
P-Channel
Configuration
Single Integrated
Discrete Power Products –
Single
2-74
V
Operating Voltage
DD
2.7
2.7
Min
Range
V
DD
6
6
Max
Application Specific MOSFET Drivers
I
LOAD
0.00012
(A)
3
Typ
t
rise
(µs)
124
28
Typ
t
fall
(µs)
–
–
Typ
P
D
0.15
1.6
(W)