FQU2N90TU_WS Fairchild Semiconductor, FQU2N90TU_WS Datasheet - Page 101
FQU2N90TU_WS
Manufacturer Part Number
FQU2N90TU_WS
Description
MOSFET N-CH 900V 1.7A IPAK
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet
1.SFU9220TU_F080.pdf
(214 pages)
Specifications of FQU2N90TU_WS
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
7.2 Ohm @ 850mA, 10V
Drain To Source Voltage (vdss)
900V
Current - Continuous Drain (id) @ 25° C
1.7A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
15nC @ 10V
Input Capacitance (ciss) @ Vds
500pF @ 25V
Power - Max
2.5W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
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FJN3306R
FJN3307R
FJN3308R
FJN3313R
FJN3314R
FJN3315R
TO-92 PNP Configuration
FJN3311R
FJN4309R
FJN4310R
FJN4311R
FJN4312R
FJN4301R
FJN4302R
FJN4303R
FJN4304R
FJN4305R
FJN4306R
FJN4307R
FJN4308R
FJN4313R
FJN4314R
TO-92S NPN Configuration
FJNS3209R
FJNS3210R
FJNS3212R
FJNS3201R
FJNS3202R
FJNS3203R
FJNS3204R
FJNS3205R
FJNS3206R
FJNS3207R
FJNS3208R
Products
V
(V)
50
50
50
50
50
50
50
40
40
40
40
40
50
50
50
50
50
50
50
50
50
50
40
40
40
50
50
50
50
50
50
50
50
CEO
V
(V)
50
50
50
50
50
50
50
40
40
40
40
40
50
50
50
50
50
50
50
50
50
50
40
40
40
50
50
50
50
50
50
50
50
CBO
V
(V)
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
EBO
5
5
5
5
5
5
5
5
Max (A)
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
I
C
(KΩ)
4.7
2.2
4.7
2.2
4.7
4.7
4.7
2.2
4.7
4.7
4.7
4.7
R
10
22
47
22
10
22
47
10
22
47
10
22
47
10
47
10
22
47
10
22
47
1
(KΩ)
4.7
4.7
4.7
4.7
R
47
47
22
47
47
10
10
22
47
10
47
47
22
47
47
10
22
47
47
47
22
–
–
–
–
–
–
–
–
2
Min
100
100
100
100
100
100
100
100
30
68
68
56
68
68
33
20
30
56
68
30
68
68
56
68
68
20
30
56
68
30
68
68
56
2-96
Discrete Power Products –
Max
600
600
600
600
600
600
600
600
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
h
FE
@V
CE
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
(V) @I
C
10
10
10
10
5
5
5
5
5
5
1
1
1
1
1
5
5
5
5
5
5
5
5
5
1
1
1
5
5
5
5
5
5
(mA)
Bipolar Transistors and JFETs
Max (V)
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
0.3
V
@I
CE (sat)
C
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
(mA) @I
B
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
10
1
1
1
1
1
1
1
(mA)
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