FQU2N90TU_WS Fairchild Semiconductor, FQU2N90TU_WS Datasheet - Page 212

• Manufacturer Part Number: FQU2N90TU_WS
• Description: MOSFET N-CH 900V 1.7A IPAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQU2N90TU_WS

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7.2 Ohm @ 850mA, 10V
• Drain To Source Voltage (vdss): 900V
• Current - Continuous Drain (id) @ 25° C: 1.7A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 15nC @ 10V
• Input Capacitance (ciss) @ Vds: 500pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Discrete
SPM™ (Smart Power Module)
F S A M 15 S H 60
(Continued)
A
Version
Voltage Rating (x 10)
H: High Switching Frequency
M: Medium Switching Frequency
S: Single-Power Supply
Current Rating
M: DIP-SPM (DIP Type of SPM PKG)
A: Option for Built-in Thermistor
B: Option for No-Thermistor
S: Divided N-Terminals (Sensorless)
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