FQU2N90TU_WS Fairchild Semiconductor, FQU2N90TU_WS Datasheet - Page 68
FQU2N90TU_WS
Manufacturer Part Number
FQU2N90TU_WS
Description
MOSFET N-CH 900V 1.7A IPAK
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet
1.SFU9220TU_F080.pdf
(214 pages)
Specifications of FQU2N90TU_WS
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
7.2 Ohm @ 850mA, 10V
Drain To Source Voltage (vdss)
900V
Current - Continuous Drain (id) @ 25° C
1.7A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
15nC @ 10V
Input Capacitance (ciss) @ Vds
500pF @ 25V
Power - Max
2.5W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
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TO-220F (Continued)
FQPF6N80C
FQPF5N80
FQPF4N80
FQPF3N80C
FQPF3N80
FQPF2N80
FQPF9N90C
FQPF8N90C
FQPF5N90
FQPF6N90C
FQPF4N90
FQPF4N90C
FQPF3N90
FQPF2NA90
FQPF2N90
FQPF3P50
FQPF1P50
FQPF4P40
FQPF2P40
FQPF9P25
SFS9644
FQPF6P25
SFS9634
SFS9624
FQPF2P25
SFS9614
FQPF12P20
SFS9640
FQPF7P20
SFS9630
FQPF5P20
SFS9620
FQPF3P20
SFS9610
TO-220F P-Channel
Products
Min. (V)
BV
--400
-500
-500
-400
-250
-250
-250
-250
-250
-250
-250
-200
-200
-200
-200
-200
-200
-200
-200
800
800
800
800
800
800
900
900
900
900
900
900
900
900
900
DSS
Config.
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
10V
4.25
10.5
0.62
0.47
0.69
2.5
2.6
3.6
4.8
6.3
1.4
1.9
2.3
2.3
3.1
4.2
5.8
7.2
4.9
3.1
6.5
0.8
1.1
1.3
2.4
0.5
0.8
1.4
1.5
2.7
5
4
4
3
R
DS(ON)
4.5V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Max (Ω) @ V
2-63
2.5V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
GS
=
Bold = New Products (introduced January 2003 or later)
1.8V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Discrete Power Products –
Q
@V
g
Typ. (nC)
GS
6.5
21
25
19
13
15
12
45
35
31
30
24
17
20
15
12
18
11
18
10
29
45
21
29
16
31
46
19
29
10
15
6
9
9
=5V
I
D
5.5
2.8
2.2
1.8
1.5
2.5
2.1
1.7
1.4
1.9
2.4
1.3
4.9
4.2
3.4
2.4
1.8
1.3
7.3
6.2
5.2
4.4
3.4
2.2
1.4
3
8
6
3
6
4
1
6
3
(A)
MOSFETs
P
D
51
47
43
39
39
35
68
60
51
56
47
47
43
39
35
39
28
39
28
50
40
45
33
28
32
13
50
40
45
33
38
28
32
13
(W)
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