FDD6637 Fairchild Semiconductor, FDD6637 Datasheet - Page 7

MOSFET P-CH 35V 13A DPAK

FDD6637

Manufacturer Part Number
FDD6637
Description
MOSFET P-CH 35V 13A DPAK
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDD6637

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
11.6 mOhm @ 14A, 10V
Drain To Source Voltage (vdss)
35V
Current - Continuous Drain (id) @ 25° C
13A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
63nC @ 10V
Input Capacitance (ciss) @ Vds
2370pF @ 20V
Power - Max
1.3W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.0116 Ohm @ 10 V
Drain-source Breakdown Voltage
35 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
13 A
Power Dissipation
3100 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDD6637TR

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Test Circuits and Waveforms
FDD6637 Rev. C2(W)
+
Figure 14. Unclamped Inductive Load Test
-
10V
R
Figure 18. Switching Time Test Circuit
Drain Current Regulator
Same type as DUT
I
Figure 16. Gate Charge Test Circuit
V
GEN
V
g(REF)
vary t
required peak I
10 F
R
GS
GS
V
GEN
V
Duty Cycle 0.1
Pulse Width
P
G
G
0V
50k
V
to obtain
DS
V
tp
GS
V
1 F
AS
DS
Circuit
1 s
I
AS
0.01
DUT
DUT
L
DUT
R
+
L
-
V
DD
-
+
V
+
DD
-
V
DD
V
V
V
V
V
V
Figure 15. Unclamped Inductive Waveforms
10V
10V
GS
GS
0V
0V
0V
0V
DS
DS
GS
GS
Figure 19. Switching Time Waveforms
10%
10%
Figure 17. Gate Charge Waveform
I
I
AS
AS
Q
Q
t
t
t
t
GS
GS
d(ON)
d(ON)
P
P
90%
90%
t
t
50%
50%
ON
ON
Charge, (nC)
Charge, (nC)
10%
10%
Q
Q
Pulse Width
Pulse Width
t
t
BV
BV
Q
Q
r
r
G
G
GD
GD
t
t
AV
AV
DSS
DSS
V
V
DS
DS
t
t
d(OFF)
d(OFF)
V
V
90%
90%
www.fairchildsemi.com
t
t
OFF
OFF
50%
50%
DD
DD
t
t
10%
10%
f
f
90%
90%

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