FDD6637 Fairchild Semiconductor, FDD6637 Datasheet - Page 5

MOSFET P-CH 35V 13A DPAK

FDD6637

Manufacturer Part Number
FDD6637
Description
MOSFET P-CH 35V 13A DPAK
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDD6637

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
11.6 mOhm @ 14A, 10V
Drain To Source Voltage (vdss)
35V
Current - Continuous Drain (id) @ 25° C
13A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
63nC @ 10V
Input Capacitance (ciss) @ Vds
2370pF @ 20V
Power - Max
1.3W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.0116 Ohm @ 10 V
Drain-source Breakdown Voltage
35 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
13 A
Power Dissipation
3100 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDD6637TR

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Typical Characteristics
FDD6637 Rev. C2(W)
1000
0.01
100
100
0.1
10
10
80
60
40
20
8
6
4
2
0
1
0
Figure 9. Maximum Safe Operating Area
0.01
0
Figure 7. Gate Charge Characteristics
0
Figure 11. Single Pulse Maximum Peak
I
D
R
SINGLE PULSE
= -14A
R
DS(ON)
V
T
JA
GS
A
= 96
= 25
= -10V
LIMIT
10
0.1
o
o
C/W
C
-V
0
DS
, DRAIN-SOURCE VOLTAGE (V)
Q
g
, GATE CHARGE (nC)
Current
20
1
t
1
, TIME (sec)
DC
1
10s
V
DS
30
10
1s
= 10V
100ms
10ms
10
SINGLE PULSE
20V
R
1ms
T
JA
100
40
A
100µs
= 96°C/W
= 25°C
30V
100
1000
50
1000
3200
2400
1600
100
100
800
10
80
60
40
20
1
0.001
0
0
0.01
0
Figure 8. Capacitance Characteristics
Figure 10. Single Pulse Maximum
C
T
Figure 12. Unclamped Inductive
J
rss
= 25
o
5
C
0.1
Switching Capability
V
0.01
Power Dissipation
D S
, DRAIN TO SOURCE VOLTAGE (V)
C
oss
t
A V
10
, TIME IN AVANCHE(ms)
1
t
1
, TIME (sec)
0.1
15
10
20
www.fairchildsemi.com
C
iss
SINGLE PULSE
1
R
T
JA
100
A
= 96°C/W
= 25°C
25
V
f = 1MHz
GS
= 0 V
1000
10
30

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