FDD6637 Fairchild Semiconductor, FDD6637 Datasheet - Page 2

• Manufacturer Part Number: FDD6637
• Description: MOSFET P-CH 35V 13A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDD6637

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 11.6 mOhm @ 14A, 10V
• Drain To Source Voltage (vdss): 35V
• Current - Continuous Drain (id) @ 25° C: 13A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 63nC @ 10V
• Input Capacitance (ciss) @ Vds: 2370pF @ 20V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.0116 Ohm @ 10 V
• Drain-source Breakdown Voltage: 35 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 13 A
• Power Dissipation: 3100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDD6637TR

FDD6637 Rev. C2(W)
Electrical Characteristics
Symbol
Drain-Source Avalanche Ratings
E
I
Off Characteristics
BV
I
I
On Characteristics
V
R
g
Dynamic Characteristics
C
C
C
R
Switching Characteristics
t
t
t
t
Q
Q
Q
Q
AS
DSS
GSS
d(on)
r
d(off)
f
FS
AS
GS(th)
DS(on)
iss
oss
rss
G
g
g
gs
gd
DSS
Drain-Source Avalanche Energy
(Single Pulse)
Drain-Source Avalanche Current
Drain–Source Breakdown
Voltage
Zero Gate Voltage Drain Current
Gate–Body Leakage
Gate Threshold Voltage
Static Drain–Source
On–Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge, V
Total Gate Charge, V
Gate–Source Charge
Gate–Drain Charge
Parameter
(Note 2)
(Note 2)
GS
GS
(Note 2)
= –10V
= –5V
V
V
V
V
V
V
V
V
V
V
f = 1.0 MHz
f = 1.0 MHz
V
V
V
T
DD
GS
DS
GS
DS
GS
GS
GS
DS
DS
DD
GS
DS
A
= 25°C unless otherwise noted
= 0 V,
= –28 V,
= 25 V,
= V
= –10 V,
= –4.5 V,
= –10 V, I
=–5 V,
= –20 V,
= –10 V,
= – 20 V, I
= -35 V, I
= –20 V,
Test Conditions
GS
, I
D
= –250 A
D
D
= -11 A, L=1mH
I
V
D
D
= –14 A, T
I
V
I
I
D
D
D
V
GS
I
R
= –14 A
= –14 A
DS
D
= –250 A
= –14 A
= –11 A
GS
GEN
= 0 V
= –1 A,
= 0 V
= 0 V,
= 6
J
=125 C
Min
–35
–1
Typ
2370
–1.6
14.4
14.7
–14
470
250
9.7
3.6
61
35
18
10
62
36
45
25
10
7
www.fairchildsemi.com
Max Units
11.6
100
–1
100
–3
18
19
32
20
58
63
35
m
mJ
nA
nC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
A
V
V
S
A