FDG330P Fairchild Semiconductor, FDG330P Datasheet - Page 4

• Manufacturer Part Number: FDG330P
• Description: MOSFET P-CH 12V 2A SC70-6
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDG330P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 110 mOhm @ 2A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 7nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 477pF @ 6V
• Power - Max: 480mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Configuration: Single Quad Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.11 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 6.8 S
• Drain-source Breakdown Voltage: 12 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 2 A
• Power Dissipation: 750 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics
0.01
Figure 9. Maximum Safe Operating Area.
100
0.1
0.001
10
Figure 7. Gate Charge Characteristics.
0.01
6
5
4
3
2
1
0
1
0.1
0.1
0.00001
0
1
R
SINGLE PULSE
R
DS(ON)
θJA
V
T
I
GS
D
A
= 260
= -2A
= 25
= -4.5V
D = 0.5
LIMIT
0.2
o
o
0.1
0.05
C/W
C
0.02
0.01
-V
2
DS
SINGLE PULSE
0.0001
, DRAIN-SOURCE VOLTAGE (V)
Q
1
DC
g
, GATE CHARGE (nC)
1s
100ms
4
Figure 11. Transient Thermal Response Curve.
V
10ms
DS
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
0.001
= -4V
1ms
10
-8V
100 µ s
6
-6V
0.01
100
8
t
1
, TIME (sec)
0.1
10
800
700
600
500
400
300
200
100
8
6
4
2
0
0.01
0
Figure 8. Capacitance Characteristics.
0
Figure 10. Single Pulse Maximum
2
1
-V
Power Dissipation.
0.1
DS
, DRAIN TO SOURCE VOLTAGE (V)
4
C
C
C
t
OSS
RSS
1
ISS
, TIME (sec)
10
6
1
P(pk)
Duty Cycle, D = t
T
R
J
R
θJA
- T
θJA
(t) = r(t) * R
8
A
= 260
t
1
100
= P * R
t
2
SINGLE PULSE
R
10
θJA
T
o
A
C/W
FDG330P Rev D (W)
= 260°C/W
10
= 25°C
θJA
1
f = 1 MHz
V
θJA
(t)
/ t
GS
2
= 0 V
1000
12
100