FDG330P Fairchild Semiconductor, FDG330P Datasheet
FDG330P
Manufacturer Part Number
FDG330P
Description
MOSFET P-CH 12V 2A SC70-6
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDG330P.pdf
(5 pages)
Specifications of FDG330P
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
110 mOhm @ 2A, 4.5V
Drain To Source Voltage (vdss)
12V
Current - Continuous Drain (id) @ 25° C
2A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
7nC @ 4.5V
Input Capacitance (ciss) @ Vds
477pF @ 6V
Power - Max
480mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Configuration
Single Quad Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.11 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
6.8 S
Drain-source Breakdown Voltage
12 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
2 A
Power Dissipation
750 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDG330P
Manufacturer:
IR
Quantity:
25 562
Part Number:
FDG330P
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FDG330P
P-Channel 1.8V Specified PowerTrench
General Description
This
Fairchild’s advanced low voltage PowerTrench process.
It has been optimized for battery power management
applications.
Applications
• Battery management
• Load switch
2001 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
Package Marking and Ordering Information
D
J
DSS
GSS
D
θJA
, T
Device Marking
STG
P-Channel
SC70-6
.30
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
1.8V
Pin 1
D
specified
D
– Continuous
– Pulsed
S
FDG330P
Device
Parameter
D
MOSFET
D
G
T
A
uses
=25
o
C unless otherwise noted
Reel Size
7’’
(Note 1a)
(Note 1a)
(Note 1b)
Note 1b)
Features
• –2 A, –12 V.
• Low gate charge
• High performance trench technology for extremely
• Compact industry standard SC70-6 surface mount
MOSFET
low R
package
DS(ON)
2
3
3
1
Tape width
–55 to +150
8mm
R
R
R
Ratings
DS(ON)
DS(ON)
DS(ON)
0.75
0.48
–12
260
± 8
–2
–6
= 110 mΩ @ V
= 150 mΩ @ V
= 215 mΩ @ V
December 2001
6
5
4
FDG330P Rev D (W)
3000 units
GS
GS
GS
Quantity
= –4.5 V
= –2.5 V
= –1.8 V
Units
°C/W
°C
W
V
V
A
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FDG330P Summary of contents
Page 1
... Note 1b) Reel Size 7’’ December 2001 R = 110 mΩ –4.5 V DS(ON 150 mΩ –2.5 V DS(ON 215 mΩ –1.8 V DS(ON Ratings Units – ± 8 –2 A –6 0.75 W 0.48 –55 to +150 °C 260 °C/W Tape width Quantity 8mm 3000 units FDG330P Rev D (W) ...
Page 2
... Min Typ Max Units –12 V –2.7 mV/°C –1 µA 100 nA –100 nA –0.4 –0.7 –1.5 V 2.3 mV/°C 84 110 mΩ 107 150 145 215 98 148 –6 A 6.8 S 477 pF 186 pF 124 0.8 nC 1.4 nC –0.62 A –0.7 –1.2 V FDG330P Rev D (W) ...
Page 3
... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. =-1.5V -1.8V -2.0V -2.5V -3.0V -4.5V 1 DRAIN CURRENT ( - 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDG330P Rev D ( 1.2 ...
Page 4
... Figure 10. Single Pulse Maximum 0.01 0 TIME (sec MHz ISS C OSS C RSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 260°C/W θ 25° TIME (sec) 1 Power Dissipation. R ( θJA θ 260 C/W θJA P(pk ( θJA Duty Cycle 100 FDG330P Rev D (W) 12 100 1000 ...
Page 5
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...