FDG330P Fairchild Semiconductor, FDG330P Datasheet - Page 3

MOSFET P-CH 12V 2A SC70-6

FDG330P

Manufacturer Part Number
FDG330P
Description
MOSFET P-CH 12V 2A SC70-6
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDG330P

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
110 mOhm @ 2A, 4.5V
Drain To Source Voltage (vdss)
12V
Current - Continuous Drain (id) @ 25° C
2A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
7nC @ 4.5V
Input Capacitance (ciss) @ Vds
477pF @ 6V
Power - Max
480mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Configuration
Single Quad Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.11 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
6.8 S
Drain-source Breakdown Voltage
12 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
2 A
Power Dissipation
750 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDG330P
Manufacturer:
IR
Quantity:
25 562
Part Number:
FDG330P
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Typical Characteristics
4.5
1.5
4.5
1.5
1.4
1.3
1.2
1.1
0.9
0.8
0.7
Figure 3. On-Resistance Variation with
6
3
0
6
3
0
1
Figure 1. On-Region Characteristics.
0.5
-50
0
Figure 5. Transfer Characteristics.
V
GS
-3.0V
V
=-4.5V
I
GS
D
V
= -2.0A
-25
DS
= -4.5V
= -5V
0.5
-V
-V
T
DS
GS
-2.5V
0
J
, DRAIN TO SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (
Temperature.
, GATE TO SOURCE VOLTAGE (V)
1
25
1
-2.0V
50
1.5
75
T
1.5
A
-1.8V
= -55
100
o
C)
o
-1.5V
C
2
125
125
o
C
25
o
C
150
2
2.5
Figure 6. Body Diode Forward Voltage Variation
0.0001
0.001
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
with Source Current and Temperature.
0.25
0.15
0.05
0.01
0.3
0.2
0.1
2.6
2.2
1.8
1.4
0.6
0.1
10
3
1
1
Drain Current and Gate Voltage.
1
0
0
V
GS
V
GS
T
= 0V
A
Gate-to-Source Voltage.
=-1.5V
= 25
T
0.2
-V
A
SD
o
= 125
C
-V
-1.8V
, BODY DIODE FORWARD VOLTAGE (V)
1.5
GS
2
, GATE TO SOURCE VOLTAGE (V)
o
-2.0V
C
T
-I
A
0.4
D
= 125
, DRAIN CURRENT (A)
25
o
C
-2.5V
o
C
0.6
3
3
-55
o
C
-3.0V
0.8
4.5
4
FDG330P Rev D (W)
I
1
D
-4.5V
= -1A
1.2
5
6

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