FDFM2P110 Fairchild Semiconductor, FDFM2P110 Datasheet - Page 3

• Manufacturer Part Number: FDFM2P110
• Description: MOSFET P-CH 20V 3.5A 3X3 MLP
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDFM2P110

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 140 mOhm @ 3.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.5A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 4nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 280pF @ 10V
• Power - Max: 800mW
• Mounting Type: Surface Mount
• Package / Case: 6-MLP, Power33
• Configuration: Single Dual Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.14 Ohms
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 3.5 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Characteristics
Notes:
1. R
defined as the solder mounting surface of the drain pins. R
user's board design.
2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is
a) 60
a 1in
o
C/W when mounted on
T
2
A
pad of 2 oz copper
= 25°C unless otherwise noted
θCA
3
is guaranteed by design while R
b) 145
Scale 1: 1 on letter size paper
a minimum pad of 2 oz
copper
o
θCA
C/W whe mounted on
is determined by the
FDFM2P110 Rev. C4 (W)