FDFM2P110 Fairchild Semiconductor, FDFM2P110 Datasheet
FDFM2P110
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FDFM2P110 Summary of contents
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... FDFM2P110 Integrated P-Channel PowerTrench General Description FDFM2P110 combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in a MicroFET package. This device is designed specifically as a single package solution for Buck Boost. It features a fast switching, low gate charge MOSFET with very low on-state resistance ...
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... A (Note -3.5A, dI /dt=100A/µ 1mA 25° 100° 25° Min Typ Max Units - -11 - mV/°C µ ±100 - - nA -0.6 -1.0 -1 mV/°C - 101 140 - 145 200 mΩ - 136 202 - 280 - Ω 3 -0.9 -1 µA 100 - - 0.32 0.39 V FDFM2P110 Rev. C4 (W) ...
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... Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2. 25°C unless otherwise noted A is guaranteed by design while R θCA o C/W when mounted on 2 pad copper 3 is determined by the θ 145 C/W whe mounted on a minimum pad copper Scale letter size paper FDFM2P110 Rev. C4 (W) ...
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... Body Diode Forward Voltage Variation with Source Current and Temperature 4 = -2.5V -3.0V -3.5V -4.0V -4. DRAIN CURRENT (A) D On-Resistance Variation with I = -1. 125 GATE TO SOURCE VOLTAGE (V) GS On-Resistance Variation with Gate-to-Source Voltage = 125 -55 C 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDFM2P110 Rev 1.2 ...
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... Transient thermal response will change depending on the circuit board design. 500 -10V 400 -15V 300 200 C 100 C rss Figure 8. 0.1 0.01 0.001 0.0001 0.00001 0.000001 0.5 0.6 0.7 0.8 0 Figure 10 1MHz iss oss DRAIN TO SOURCE VOLTAGE (V) DS Capacitance Characteristics 125 100 REVERSE VOLTAGE (V) R Schottky Diode Reverse Current FDFM2P110 Rev ...
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... FDFM2P110 Rev. C4 (W) ...
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... The datasheet is printed for reference information only. 7 SPM™ Stealth™ SuperFET™ SuperSOT™-3 SuperSOT™-6 ® SuperSOT™-8 ® SyncFET™ ® TinyLogic TINYOPTO™ TruTranslation™ UHC™ ® UltraFET UniFET™ ® VCX™ Wire™ Definition Rev. I16 FDFM2P110 Rev. C4 (W) ...