NDT014 Fairchild Semiconductor, NDT014 Datasheet - Page 6

• Manufacturer Part Number: NDT014
• Description: MOSFET N-CH 60V 2.7A SOT-223-4
• Manufacturer: Fairchild Semiconductor

Specifications of NDT014

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 200 mOhm @ 1.6A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 2.7A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 11nC @ 10V
• Input Capacitance (ciss) @ Vds: 155pF @ 25V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.2 Ohms
• Forward Transconductance Gfs (max / Min): 2 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: +/- 2.7 A
• Power Dissipation: 3 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Continuous Drain Current Id: 2.7A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 180mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Fall Time: 10 ns
• Rise Time: 64 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NDT014TR

Typical Electrical Characteristics
Figure 13. Transconductance Variation with Drain
4
3
2
1
0
0.005
0.002
0.001
0
0.05
0.02
0.01
0.5
0.2
0.1
0.0001
1
Current and Temperature.
V
DS
D = 0.5
= 1 0 V
0.2
0.02
0.05
0.01
0.1
2
Single Pulse
I
D
, DRAIN CURRENT (A)
0.001
4
Figure 15. Transient Thermal Response Curve
Note: Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change
T = -55°C
J
depending on the circuit board design.
25°C
6
125°C
0.01
(continued)
8
1 0
0.1
t , TIME (sec)
1
Figure 14. Maximum Safe Operating Area.
0.05
0.01
0.5
0.1
2 0
1 0
5
2
1
0.1
0.2
SINGLE PULSE
R
V
T
.
J A
A
GS
= 42 C/W
1
= 25°C
0.5
= 10V
V
DS
o
, DRAIN-SOURCE VOLTAGE (V)
1
2
P(pk)
1 0
5
T - T
R
Duty Cycle, D = t
J
R
JA
1 0
JA
t
1
A
(t) = r(t) * R
t
= P * R
= See Note 1 c
2
3 0
JA
1
1 0 0
/ t
(t)
6 0
JA
2
NDT014 Rev. C1
1 0 0
3 0 0