NDT014 Fairchild Semiconductor, NDT014 Datasheet - Page 4

• Manufacturer Part Number: NDT014
• Description: MOSFET N-CH 60V 2.7A SOT-223-4
• Manufacturer: Fairchild Semiconductor

Specifications of NDT014

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 200 mOhm @ 1.6A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 2.7A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 11nC @ 10V
• Input Capacitance (ciss) @ Vds: 155pF @ 25V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.2 Ohms
• Forward Transconductance Gfs (max / Min): 2 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: +/- 2.7 A
• Power Dissipation: 3 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Continuous Drain Current Id: 2.7A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 180mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Fall Time: 10 ns
• Rise Time: 64 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NDT014TR

Typical Electrical Characteristics
1 0
8
6
4
2
0
8
6
4
2
0
1.8
1.6
1.4
1.2
0.8
0.6
0.4
2
0
2
1
-50
Figure 1. On-Region Characteristics.
Figure 3. On-Resistance Variation
V
Figure 5. Transfer Characteristics.
DS
V
I
D
G S
= 10V
= 2.7A
-25
with Temperature.
= 10V
V
V
GS
4
GS
1
V
0
= 10V
DS
T , JUNCTION TEMPERATURE (°C)
, GATE TO SOURCE VOLTAGE (V)
J
, DRAIN-SOURCE VOLTAGE (V)
2 5
8.0
6
2
5 0
T
J
7.0
= -55°C
7 5
6.5
6.0
100
8
3
25°C
5.5
5.0
4.5
125
125°C
150
1 0
4
2.5
1.5
0.5
1.2
1.1
0.9
0.8
0.7
3
2
1
0
2.5
1.5
0.5
1
Figure 4. On-Resistance Variation with Drain
Figure 2. On-Resistance Variation with Gate Voltage
-50
0
2
1
0
Figure 6. Gate Threshold Variation with
V
GS
Current and Temperature.
and Drain Current.
-25
V
GS
Temperature.
= 10 V
= 5.5V
2
2
0
T , JUNCTION TEMPERATURE (°C)
J
I
6.0
I
D
D
2 5
, DRAIN-CURRENT(A)
, DRAIN CURRENT (A)
4
4
6.5
5 0
T = 125°C
J
6
7.0
6
7 5
25°C
-55°C
I
100
V
D
DS
= 250µA
8.0
8
8
= V
GS
125
NDT014 Rev. C1
1 0
150
1 0
10