NDT014 Fairchild Semiconductor, NDT014 Datasheet - Page 5

• Manufacturer Part Number: NDT014
• Description: MOSFET N-CH 60V 2.7A SOT-223-4
• Manufacturer: Fairchild Semiconductor

Specifications of NDT014

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 200 mOhm @ 1.6A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 2.7A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 11nC @ 10V
• Input Capacitance (ciss) @ Vds: 155pF @ 25V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Configuration: Single Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.2 Ohms
• Forward Transconductance Gfs (max / Min): 2 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: +/- 2.7 A
• Power Dissipation: 3 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Continuous Drain Current Id: 2.7A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 180mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Fall Time: 10 ns
• Rise Time: 64 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NDT014TR

Typical Electrical Characteristics
V
GS
4 0 0
3 0 0
2 0 0
1 0 0
Figure 9. Capacitance Characteristics.
5 0
3 0
2 0
1 0
1.15
1.05
0.95
0.1
1.1
0.9
Figure 7. Breakdown Voltage Variation with
1
-50
Figure 11. Switching Test Circuit.
I
D
0.2
f = 1 MHz
V
R
GS
= 250µA
Temperature.
GEN
-25
= 0 V
V
0.5
DS
T
0
J
, DRAIN TO SOURCE VOLTAGE (V)
V
, JUNCTION TEMPERATURE (°C)
IN
G
1
25
2
50
D
S
V
DD
5
75
R
L
(continued)
DUT
1 0
100
2 0
125
C iss
C oss
V
C rss
OUT
150
5 0
V
t
V
OUT
d(on)
IN
Figure 8. Body Diode Forward Voltage Variation with
0.001
1 5
1 2
1 0 %
0.01
Figure 10. Gate Charge Characteristics.
9
6
3
0
0.5
0.1
1 0
0
5
1
0.2
Figure 12. Switching Waveforms.
Current and Temperature.
I
D
V
= 2.7A
GS
T = 125°C
t
5 0 %
on
J
1
1 0 %
= 0 V
0.4
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
t
9 0 %
PULSE WIDTH
r
Q
2
0.6
g
, GATE CHARGE (nC)
25°C
t
d(off)
3
0.8
5 0 %
-55°C
V
DS
4
1
9 0 %
= 10V
t
1 0 %
off
9 0 %
1.2
20V
5
NDT014 Rev. C1
INVERTED
t
f
4 0 V
1.4
6