FDB15N50 Fairchild Semiconductor, FDB15N50 Datasheet - Page 5

• Manufacturer Part Number: FDB15N50
• Description: MOSFET N-CH 500V 15A TO-263AB
• Manufacturer: Fairchild Semiconductor

Specifications of FDB15N50

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 380 mOhm @ 7.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 15A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 41nC @ 10V
• Input Capacitance (ciss) @ Vds: 1850pF @ 25V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.3 Ohms @ 10 V
• Forward Transconductance Gfs (max / Min): 10 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 15 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDB15N50; FDB15N50TR

©2003 Fairchild Semiconductor Corporation
Test Circuits and Waveforms
VARY t
REQUIRED PEAK I
V
0V
GS
I
Figure 12. Unclamped Energy Test Circuit
g(REF)
Figure 16. Switching Time Test Circuit
P
Figure 14. Gate Charge Test Circuit
TO OBTAIN
V
t
GS
P
V
GS
AS
R
GS
R
V
G
GS
V
DS
V
DUT
DS
V
I
AS
DS
R
DUT
L
R
DUT
L
0.01
L
-
+
V
-
+
-
+
DD
V
V
DD
DD
0
I
0
0
V
V
V
g(REF)
0
0
DD
V
DS
GS
10%
Figure 13. Unclamped Energy Waveforms
GS
V
= 1V
Figure 17. Switching Time Waveform
GS
Figure 15. Gate Charge Waveforms
t
d(ON)
90%
Q
gs
Q
50%
t
ON
g(TH)
10%
t
r
I
AS
PULSE WIDTH
Q
t
gd
P
Q
V
g(TOT)
DS
BV
t
FDH15N50 / FDP15N50 / FDB15N50 RevD2
AV
DSS
t
d(OFF)
90%
V
t
DS
OFF
50%
t
V
f
10%
GS
V
= 10V
DD
90%