FDB15N50 Fairchild Semiconductor, FDB15N50 Datasheet - Page 4

MOSFET N-CH 500V 15A TO-263AB

FDB15N50

Manufacturer Part Number
FDB15N50
Description
MOSFET N-CH 500V 15A TO-263AB
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of FDB15N50

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
380 mOhm @ 7.5A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
15A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
41nC @ 10V
Input Capacitance (ciss) @ Vds
1850pF @ 25V
Power - Max
300W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.3 Ohms @ 10 V
Forward Transconductance Gfs (max / Min)
10 S
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
15 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDB15N50
FDB15N50TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDB15N50
Manufacturer:
FAIRCHILD
Quantity:
12 500
Part Number:
FDB15N50
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDB15N50
Quantity:
5 000
©2003 Fairchild Semiconductor Corporation
Typical Characteristics
Figure 7. Body Diode Forward Voltage vs Body
16
12
30
25
20
15
10
Figure 9. Maximum Drain Current vs Case
8
4
0
5
0
10
10
10
0.3
25
-1
-2
0
10
0.50
-5
0.02
0.20
0.10
0.05
0.01
0.4
V
50
SD
SINGLE PULSE
, SOURCE TO DRAIN VOLTAGE (V)
Figure 11. Normalized Transient Thermal Impedance, Junction to Case
T
C
0.5
, CASE TEMPERATURE (
Diode Current
T
Temperature
75
J
= 175
10
0.6
-4
o
C
100
0.7
125
0.8
o
10
C)
-3
t
150
1
, RECTANGULAR PULSE DURATION (s)
T
0.9
J
= 25
o
C
175
1.0
10
-2
Figure 10. Unclamped Inductive Switching
100
1.0
0.1
10
Figure 8. Maximum Safe Operating Area
50
10
1
0.01
1
If R = 0
t
If R
t
AV
AV
OPERATION IN THIS AREA
LIMITED BY R
= (L)(I
= (L/R)ln[(I
0
V
STARTING T
DS
AS
)/(1.3*RATED BV
t
, DRAIN TO SOURCE VOLTAGE (V)
10
AV
AS
0.1
-1
, TIME IN AVALANCHE (ms)
DS(ON)
*R)/(1.3*RATED BV
10
Capability
J
= 150
DUTY FACTOR, D = t
PEAK T
o
DSS
C
1
- V
FDH15N50 / FDP15N50 / FDB15N50 RevD2
P
D
J
DD
DSS
= (PD X Z
STARTING T
10
)
100
0
- V
t
DD
1
t
2
) +1]
JC
1
X R
J
10
T
/ t
= 25
C
2
JC
= 25
o
) + T
100µs
10ms
1ms
C
DC
o
C
1000
C
10
50
1

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