FDP19N40 Fairchild Semiconductor, FDP19N40 Datasheet - Page 7

• Manufacturer Part Number: FDP19N40
• Description: MOSFET N-CH 400V 19A TO-220
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDP19N40

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 240 mOhm @ 9.5A, 10V
• Drain To Source Voltage (vdss): 400V
• Current - Continuous Drain (id) @ 25° C: 19A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 40nC @ 10V
• Input Capacitance (ciss) @ Vds: 2115pF @ 25V
• Power - Max: 215W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.24 Ohm @ 10 V
• Drain-source Breakdown Voltage: 400 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 19 A
• Power Dissipation: 215000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP19N40 / FDPF19N40 Rev. A
Mechanical Dimensions
[2.54
2.54TYP
1.27
±0.20
±0.10
]
ø3.60
10.00
9.90
(8.70)
±0.20
±0.10
±0.20
[2.54
1.52
0.80
2.54TYP
±0.10
±0.10
±0.20
TO-220
]
7
0.50
+0.10
–0.05
2.40
4.50
1.30
±0.20
±0.20
+0.10
–0.05
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