FDP19N40 Fairchild Semiconductor, FDP19N40 Datasheet - Page 6

• Manufacturer Part Number: FDP19N40
• Description: MOSFET N-CH 400V 19A TO-220
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDP19N40

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 240 mOhm @ 9.5A, 10V
• Drain To Source Voltage (vdss): 400V
• Current - Continuous Drain (id) @ 25° C: 19A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 40nC @ 10V
• Input Capacitance (ciss) @ Vds: 2115pF @ 25V
• Power - Max: 215W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.24 Ohm @ 10 V
• Drain-source Breakdown Voltage: 400 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 19 A
• Power Dissipation: 215000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP19N40 / FDPF19N40 Rev. A
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( D r i v e r )
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( D U T )
( D U T )
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G S
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Peak Diode Recovery dv/dt Test Circuit & Waveforms
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, B o d y D i o d e F o r w a r d C u r r e n t
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G a t e P u l s e P e r i o d
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G a t e P u l s e W i d t h
G a t e P u l s e W i d t h
G a t e P u l s e W i d t h
B o d y D i o d e
B o d y D i o d e
S a m e T y p e
S a m e T y p e
B o d y D i o d e R e c o v e r y d v / d t
B o d y D i o d e R e c o v e r y d v / d t
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B o d y D i o d e R e v e r s e C u r r e n t
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c o n t r o l l e d b y p u l s e p e r i o d
c o n t r o l l e d b y p u l s e p e r i o d
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