FDP19N40 Fairchild Semiconductor, FDP19N40 Datasheet

MOSFET N-CH 400V 19A TO-220

FDP19N40

Manufacturer Part Number
FDP19N40
Description
MOSFET N-CH 400V 19A TO-220
Manufacturer
Fairchild Semiconductor
Series
UniFET™r
Datasheet

Specifications of FDP19N40

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
240 mOhm @ 9.5A, 10V
Drain To Source Voltage (vdss)
400V
Current - Continuous Drain (id) @ 25° C
19A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
40nC @ 10V
Input Capacitance (ciss) @ Vds
2115pF @ 25V
Power - Max
215W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.24 Ohm @ 10 V
Drain-source Breakdown Voltage
400 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
19 A
Power Dissipation
215000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDP19N40
Manufacturer:
FAIRCHILD
Quantity:
8 000
Part Number:
FDP19N40
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2008 Fairchild Semiconductor Corporation
FDP19N40 / FDPF19N40 Rev. A
*Drain current limited by maximum junction temperature
MOSFET Maximum Ratings
Thermal Characteristics
V
V
I
I
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
FDP19N40 / FDPF19N40
N-Channel MOSFET
400V, 19A, 0.24Ω
Features
• R
• Low Gate Charge ( Typ. 32nC)
• Low C
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
• RoHS Compliant
J
L
DSS
GSS
AS
AR
D
θJC
θCS
θJA
, T
Symbol
Symbol
STG
DS(on)
rss
=0.2Ω ( Typ.)@ V
( Typ. 20pF)
G
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient
D
S
GS
TO-220
FDP Series
= 10V, I
D
= 9.5A
T
C
= 25
Parameter
Parameter
-Continuous (T
-Continuous (T
- Pulsed
(T
- Derate above 25
C
o
C unless otherwise noted*
= 25
G
o
D
C)
S
C
C
= 25
= 100
1
o
C
o
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior
performance, and withstand high energy pluse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power suppliesand active power
factor correction.
C)
o
TO-220F
FDPF Series
C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FDP19N40
FDP19N40
G
11.4
1.65
62.5
215
0.6
0.5
19
76
-55 to +150
21.5
400
±30
542
300
19
15
FDPF19N40
FDPF19N40
S
D
UniFET
11.4*
62.5
19*
76*
3.0
0.3
40
-
www.fairchildsemi.com
October
switching
Units
W/
Units
o
V/ns
C/W
mJ
mJ
o
o
W
V
V
A
A
A
C
C
o
C
TM
tm

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FDP19N40 Summary of contents

Page 1

... R Thermal Resistance, Case to Sink Typ. θCS R Thermal Resistance, Junction to Ambient θJA ©2008 Fairchild Semiconductor Corporation FDP19N40 / FDPF19N40 Rev. A Description = 9.5A These N-Channel enhancement mode power field effect D transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to ...

Page 2

... Starting ≤ 19A, di/dt ≤ 200A/μs, V ≤ Starting DSS 4: Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FDP19N40 / FDPF19N40 Rev unless otherwise noted C Package Reel Size TO-220 - TO-220F - Test Conditions I = 250μ ...

Page 3

... I , Drain Current [A] D Figure 5. Capacitance Characteristics 3500 C iss = oss = 3000 C rss = C gd 2500 2000 1500 1000 500 0 0 Drain-Source Voltage [V] DS FDP19N40 / FDPF19N40 Rev. A Figure 2. Transfer Characteristics 50 10 *Notes: μ 1. 250 s Pulse Test Figure 4. Body Diode Forward Voltage 20V GS o *Note: T ...

Page 4

... Figure 9. Maximum Safe Operating Area - FDP19N40 200 100 10 Operation in This Area 1 is Limited by R DS(on) 0.1 0. Drain-Source Voltage [V] DS Figure 11. Transient Thermal Response Curve - FDP19N40 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single pulse 0.003 -5 10 FDP19N40 / FDPF19N40 Rev. A (Continued) Figure 8 ...

Page 5

... FDP19N40 / FDPF19N40 Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

Page 6

... FDP19N40 / FDPF19N40 Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms + + • • • I • www.fairchildsemi.com ...

Page 7

... Mechanical Dimensions 9.90 (8.70) ø3.60 1.27 ±0.10 2.54TYP [2.54 ] ±0.20 10.00 FDP19N40 / FDPF19N40 Rev. A TO-220 ±0.20 ±0.10 1.52 ±0.10 0.80 ±0.10 2.54TYP [2.54 ] ±0.20 ±0.20 7 4.50 ±0.20 +0.10 1.30 –0.05 +0.10 0.50 2.40 ±0.20 –0.05 www.fairchildsemi.com ...

Page 8

... Mechanical Dimensions 10.16 MAX1.47 0.80 ±0.10 0.35 ±0.10 2.54TYP [2.54 ] ±0.20 9.40 FDP19N40 / FDPF19N40 Rev. A TO-220F ø3.18 ±0.20 ±0.10 (7.00) (1.00x45°) #1 2.54TYP [2.54 ] ±0.20 ±0.20 8 2.54 ±0.20 (0.70) +0.10 0.50 2.76 ±0.20 –0.05 Dimensions in Millimeters www.fairchildsemi.com ...

Page 9

... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDP19N40 / FDPF19N40 Rev. A ® FRFET Programmable Active Droop™ SM ® Global Power Resource QFET Green FPS™ QS™ Green FPS™ e-Series™ ...

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