PSMN012-100YS,115 NXP Semiconductors, PSMN012-100YS,115 Datasheet - Page 9

• Manufacturer Part Number: PSMN012-100YS,115
• Description: MOSFET N-CH 100V 60A LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN012-100YS,115

• Package / Case: LFPak-4
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 60A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 64nC @ 10V
• Input Capacitance (ciss) @ Vds: 3500pF @ 50V
• Power - Max: 130W
• Mounting Type: Surface Mount
• Gate Charge Qg: 64 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 23 mOhms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 60 A
• Power Dissipation: 130 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4978-2

NXP Semiconductors
PSMN012-100YS_4
Product data sheet
Fig 13. Drain-source on-state resistance as a function
Fig 15. Gate-source voltage as a function of gate
(mΩ)
R
V
(V)
DSon
GS
45
30
15
10
0
8
6
4
2
0
of drain current; typical values
charge; typical values
0
0
V
GS
20
20
(V) =
20V
4.5
40
40
V
DS
60
60
4.8
= 50V
80V
All information provided in this document is subject to legal disclaimers.
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I
D
G
(A)
(nC)
5.0
5.5
10.0
Rev. 04 — 23 February 2010
80
80
N-channel 100V 12mΩ standard level MOSFET in LFPAK
Fig 14. Gate charge waveform definitions
Fig 16. Input, output and reverse transfer capacitances
(pF)
C
10
10
10
10
4
3
2
10
as a function of drain-source voltage; typical
values
V
-1
V
V
V
GS(pl)
DS
GS(th)
GS
Q
GS1
PSMN012-100YS
1
I
Q
D
GS
Q
GS2
Q
G(tot)
Q
GD
10
© NXP B.V. 2010. All rights reserved.
V
DS
003aaa508
003aad851
(V)
C
C
C
oss
iss
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10
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