PSMN012-100YS,115 NXP Semiconductors, PSMN012-100YS,115 Datasheet - Page 10

• Manufacturer Part Number: PSMN012-100YS,115
• Description: MOSFET N-CH 100V 60A LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN012-100YS,115

• Package / Case: LFPak-4
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 60A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 64nC @ 10V
• Input Capacitance (ciss) @ Vds: 3500pF @ 50V
• Power - Max: 130W
• Mounting Type: Surface Mount
• Gate Charge Qg: 64 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 23 mOhms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 60 A
• Power Dissipation: 130 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4978-2

NXP Semiconductors
PSMN012-100YS_4
Product data sheet
Fig 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
(A)
I
S
100
75
50
25
0
0
All information provided in this document is subject to legal disclaimers.
Rev. 04 — 23 February 2010
0.3
T
j
= 175 °C
N-channel 100V 12mΩ standard level MOSFET in LFPAK
0.6
T
j
0.9
= 25 °C
003aad855
V
SD
(V)
1.2
PSMN012-100YS
© NXP B.V. 2010. All rights reserved.
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