PSMN012-100YS,115 NXP Semiconductors, PSMN012-100YS,115 Datasheet - Page 3

• Manufacturer Part Number: PSMN012-100YS,115
• Description: MOSFET N-CH 100V 60A LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN012-100YS,115

• Package / Case: LFPak-4
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 60A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 64nC @ 10V
• Input Capacitance (ciss) @ Vds: 3500pF @ 50V
• Power - Max: 130W
• Mounting Type: Surface Mount
• Gate Charge Qg: 64 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 23 mOhms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 60 A
• Power Dissipation: 130 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4978-2

NXP Semiconductors
4. Limiting values
Table 4.
In accordance with the Absolute Maximum Rating System (IEC 60134).
PSMN012-100YS_4
Product data sheet
Symbol
V
V
V
I
I
P
T
T
T
Source-drain diode
I
I
Avalanche ruggedness
E
D
DM
S
SM
Fig 1.
stg
j
sld(M)
DS
DGR
GS
tot
DS(AL)S
(A)
I
D
80
60
40
20
0
mounting base temperature
Continuous drain current as a function of
0
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
peak soldering
temperature
source current
peak source current
non-repetitive
drain-source avalanche
energy
50
100
Conditions
T
T
T
T
t
T
t
V
R
T
p
p
j
j
mb
mb
mb
mb
GS
150
GS
≤ 10 µs; pulsed; T
≤ 10 µs; pulsed; T
≥ 25 °C; T
≥ 25 °C; T
All information provided in this document is subject to legal disclaimers.
= 100 °C; see
= 25 °C; see
= 25 °C; see
= 25 °C
= 10 V; T
= 50 Ω; unclamped
T
003aad844
mb
(°C)
Rev. 04 — 23 February 2010
200
j
j
≤ 175 °C
≤ 175 °C; R
j(init)
Figure 1
Figure 2
= 25 °C; I
Figure 1
N-channel 100V 12mΩ standard level MOSFET in LFPAK
mb
mb
= 25 °C; see
= 25 °C
GS
Fig 2.
D
= 20 kΩ
= 60 A; V
P
(%)
der
120
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
Figure 3
sup
≤ 100 V;
50
PSMN012-100YS
100
Min
-
-
-20
-
-
-
-
-55
-55
-
-
-
-
150
© NXP B.V. 2010. All rights reserved.
T
mb
Max
100
100
20
43
60
242
130
175
175
260
60
242
170
03aa16
(°C)
200
V
°C
°C
Unit
V
V
A
A
A
W
°C
A
A
mJ
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