PSMN012-100YS,115 NXP Semiconductors, PSMN012-100YS,115 Datasheet - Page 7

• Manufacturer Part Number: PSMN012-100YS,115
• Description: MOSFET N-CH 100V 60A LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN012-100YS,115

• Package / Case: LFPak-4
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 60A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 64nC @ 10V
• Input Capacitance (ciss) @ Vds: 3500pF @ 50V
• Power - Max: 130W
• Mounting Type: Surface Mount
• Gate Charge Qg: 64 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 23 mOhms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 60 A
• Power Dissipation: 130 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4978-2

NXP Semiconductors
Table 6.
PSMN012-100YS_4
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
(mΩ)
R
(S)
g
DSon
120
fs
90
60
30
40
31
22
13
0
4
drain current; typical values
of gate-source voltage; typical values
Forward transconductance as a function of
Drain-source on-state resistance as a function
0
2
Characteristics
Parameter
source-drain voltage
reverse recovery time
recovered charge
25
8
…continued
50
14
Conditions
I
I
V
S
S
DS
75
= 15 A; V
= 15 A; dI
All information provided in this document is subject to legal disclaimers.
= 50 V
V
003aad849
003aad852
GS
I
D
(A)
(V)
Rev. 04 — 23 February 2010
100
GS
20
S
/dt = 100 A/µs; V
= 0 V; T
N-channel 100V 12mΩ standard level MOSFET in LFPAK
j
= 25 °C; see
Fig 6.
Fig 8.
(pF)
GS
(A)
C
I
6000
4000
2000
D
120
90
60
30
= 0 V;
0
0
function of gate-source voltage; typical values
function of drain-source voltage; typical values
Input and reverse transfer capacitances as a
Output characteristics: drain current as a
0
0
Figure 17
3
PSMN012-100YS
Min
-
-
-
6
1
10.0
Typ
0.8
56
129
9
© NXP B.V. 2010. All rights reserved.
V
GS
V
V
003aad850
003aad847
GS
DS
Max
1.2
-
-
(V) = 4
(V)
(V)
5.5
C
C
5.0
4.8
4.5
iss
rss
12
2
nC
Unit
V
ns
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