PSMN012-100YS,115 NXP Semiconductors, PSMN012-100YS,115 Datasheet - Page 12

• Manufacturer Part Number: PSMN012-100YS,115
• Description: MOSFET N-CH 100V 60A LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN012-100YS,115

• Package / Case: LFPak-4
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 60A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 64nC @ 10V
• Input Capacitance (ciss) @ Vds: 3500pF @ 50V
• Power - Max: 130W
• Mounting Type: Surface Mount
• Gate Charge Qg: 64 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 23 mOhms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 60 A
• Power Dissipation: 130 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4978-2

NXP Semiconductors
8. Revision history
Table 7.
PSMN012-100YS_4
Product data sheet
Document ID
PSMN012-100YS_4
Modifications:
PSMN012-100YS_3
PSMN012-100YS_2
PSMN012-100YS_1
Revision history
20100223
20100107
20091214
20091022
Release date
•
Status changed from objective to product.
All information provided in this document is subject to legal disclaimers.
Data sheet status
Product data sheet
Product data sheet
Objective data sheet
Objective data sheet
Rev. 04 — 23 February 2010
N-channel 100V 12mΩ standard level MOSFET in LFPAK
Change notice
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PSMN012-100YS
Supersedes
PSMN012-100YS_3
PSMN012-100YS_2
PSMN012-100YS_1
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© NXP B.V. 2010. All rights reserved.
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