PSMN012-100YS,115 NXP Semiconductors, PSMN012-100YS,115 Datasheet - Page 6

• Manufacturer Part Number: PSMN012-100YS,115
• Description: MOSFET N-CH 100V 60A LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN012-100YS,115

• Package / Case: LFPak-4
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 60A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 64nC @ 10V
• Input Capacitance (ciss) @ Vds: 3500pF @ 50V
• Power - Max: 130W
• Mounting Type: Surface Mount
• Gate Charge Qg: 64 nC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 23 mOhms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 60 A
• Power Dissipation: 130 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4978-2

NXP Semiconductors
6. Characteristics
Table 6.
PSMN012-100YS_4
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
R
Dynamic characteristics
Q
Q
Q
Q
Q
V
C
C
C
t
t
t
t
DSS
GSS
d(on)
r
d(off)
f
(BR)DSS
GS(th)
GS(pl)
DSon
G
iss
oss
rss
G(tot)
GS
GS(th)
GS(th-pl)
GD
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
internal gate resistance
(AC)
total gate charge
gate-source charge
pre-threshold
gate-source charge
post-threshold
gate-source charge
gate-drain charge
gate-source plateau
voltage
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
Conditions
I
I
I
see
I
and
I
see
V
V
V
V
V
see
V
see
V
see
f = 1 MHz
I
I
see
I
see
I
see
V
V
see
V
R
D
D
D
D
D
D
D
D
D
DS
DS
GS
GS
GS
GS
GS
DS
DS
DS
G(ext)
= 0.25 mA; V
= 0.25 mA; V
= 1 mA; V
= 1 mA; V
= 1 mA; V
= 0 A; V
= 45 A; V
= 45 A; V
= 45 A; V
Figure 10
Figure 10
Figure 12
Figure 12
Figure 13
Figure 14
Figure 14
Figure 14
Figure 16
All information provided in this document is subject to legal disclaimers.
10
= 100 V; V
= 100 V; V
= 50 V; see
= 50 V; V
= 50 V; R
= 20 V; V
= -20 V; V
= 10 V; I
= 10 V; I
= 10 V; I
= 4.7 Ω; T
DS
Rev. 04 — 23 February 2010
DS
DS
DS
DS
DS
DS
D
D
D
= 0 V; V
DS
GS
L
and
and
DS
= 15 A; T
= 15 A; T
= 15 A; T
= 50 V; V
= 50 V; V
= 50 V; V
GS
GS
= V
= V
= V
= 1.1 Ω; V
GS
GS
Figure 14
= 0 V; T
= 0 V; f = 1 MHz; T
j
= 0 V; T
= 0 V; T
= 0 V; T
= 25 °C
GS
= 0 V; T
= 0 V; T
GS
GS
15
15
N-channel 100V 12mΩ standard level MOSFET in LFPAK
; T
; T
; T
GS
j
j
j
j
j
j
GS
GS
GS
= 25 °C; see
j
= 10 V
= 175 °C;
= -55 °C;
= 100 °C;
= 175 °C;
= 25 °C;
j
GS
= 25 °C
j
j
j
j
= 25 °C
and
= 125 °C
= 25 °C
= 10 V;
= 10 V;
= 10 V;
= -55 °C
= 25 °C
= 10 V;
15
j
= 25 °C;
Figure 11
PSMN012-100YS
Min
90
100
0.95
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
3
-
-
0.06
10
10
-
27
10
0.7
51
64
14.9
10.2
4.7
19
4.4
3500
246
149
23
25
31
52.5
© NXP B.V. 2010. All rights reserved.
Max
-
-
-
4
4.6
100
5
100
100
23
35.8
12
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
µA
nC
pF
ns
Unit
V
V
V
V
V
µA
nA
nA
mΩ
mΩ
mΩ
Ω
nC
nC
nC
nC
nC
V
pF
pF
ns
ns
ns
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