PSMN012-60YS,115 NXP Semiconductors, PSMN012-60YS,115 Datasheet
PSMN012-60YS,115
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PSMN012-60YS,115 Summary of contents
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... PSMN012-60YS N-channel LFPAK 60 V, 11.1 mΩ standard level MOSFET Rev. 01 — 5 January 2010 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment ...
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... Conditions 100 °C; see see Figure 13 Simplified outline SOT669 (LFPAK) All information provided in this document is subject to legal disclaimers. Rev. 01 — 5 January 2010 PSMN012-60YS Min Typ Max - - 17.8 Figure ° 11.1 j Graphic symbol mbb076 Version SOT669 © NXP B.V. 2010. All rights reserved. ...
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... j(init Ω 003aad856 120 P der (%) 150 200 0 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 01 — 5 January 2010 PSMN012-60YS Min Max - - Figure 3 - 236 - 89 -55 175 -55 175 - 260 - 59 - 236 ≤ ...
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... PSMN012-60YS_1 Product data sheet N-channel LFPAK 60 V, 11.1 mΩ standard level MOSFET = 10 μ 100 μ 1ms 10ms 100ms 10 10 All information provided in this document is subject to legal disclaimers. Rev. 01 — 5 January 2010 PSMN012-60YS 003aad857 (V) DS © NXP B.V. 2010. All rights reserved ...
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... Transient thermal impedance from junction to mounting base as a function of pulse duration; typical values PSMN012-60YS_1 Product data sheet N-channel LFPAK 60 V, 11.1 mΩ standard level MOSFET Conditions see Figure All information provided in this document is subject to legal disclaimers. Rev. 01 — 5 January 2010 PSMN012-60YS Min Typ Max - 0.8 1.68 003aad858 t p δ ...
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... DS GS see Figure see Figure 14 and see Figure 14 and MHz see Figure Ω 4.7 Ω R G(ext) All information provided in this document is subject to legal disclaimers. Rev. 01 — 5 January 2010 PSMN012-60YS Min Typ Max Figure Figure 4 100 - 2 100 - 17 25 17.8 Figure ...
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... R DSon (mΩ iss 24 C rss 7 (V) GS Fig 8. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 01 — 5 January 2010 PSMN012-60YS Min Typ Max Figure 17 - 0.82 1 003aad861 (A) D 003aad865 (V) GS © ...
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... T (°C) j Fig 12. Normalized drain-source on-state resistance factor as a function of junction temperature. All information provided in this document is subject to legal disclaimers. Rev. 01 — 5 January 2010 PSMN012-60YS 03aa35 min typ max (V) GS 003aad696 0 60 120 180 T (° ...
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... Fig 14. Gate charge waveform definitions 003aad866 (pF (nC) G Fig 16. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 01 — 5 January 2010 PSMN012-60YS GS1 GS2 G(tot) 003aaa508 003aad863 C iss C oss C rss 2 1 ...
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... PSMN012-60YS_1 Product data sheet N-channel LFPAK 60 V, 11.1 mΩ standard level MOSFET ( 175 ° 0.2 0.4 0.6 0.8 All information provided in this document is subject to legal disclaimers. Rev. 01 — 5 January 2010 PSMN012-60YS 003aad867 ° (V) SD © NXP B.V. 2010. All rights reserved ...
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... D E max 4.41 2.2 0.9 0.25 0.30 4.10 5.0 4.20 3.62 2.0 0.7 0.19 0.24 3.80 4.8 REFERENCES JEDEC JEITA MO-235 All information provided in this document is subject to legal disclaimers. Rev. 01 — 5 January 2010 PSMN012-60YS detail ( 3.3 6.2 0.85 1.3 1.3 1.27 ...
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... PSMN012-60YS_1 Product data sheet N-channel LFPAK 60 V, 11.1 mΩ standard level MOSFET Data sheet status Change notice Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 01 — 5 January 2010 PSMN012-60YS Supersedes - © NXP B.V. 2010. All rights reserved ...
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... All information provided in this document is subject to legal disclaimers. Rev. 01 — 5 January 2010 PSMN012-60YS © NXP B.V. 2010. All rights reserved ...
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... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS— trademark of NXP B.V. to:salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 01 — 5 January 2010 PSMN012-60YS © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 5 January 2010 Document identifier: PSMN012-60YS_1 ...