FDH44N50 Fairchild Semiconductor, FDH44N50 Datasheet - Page 4

• Manufacturer Part Number: FDH44N50
• Description: MOSFET N-CH 500V 44A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of FDH44N50

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 120 mOhm @ 22A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 44A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 108nC @ 10V
• Input Capacitance (ciss) @ Vds: 5335pF @ 25V
• Power - Max: 750W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.12 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 11 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 44 A
• Power Dissipation: 750000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2002 Fairchild Semiconductor Corporation
Typical Characteristic
Figure 7. Body Diode Forward Voltage vs Body
80
70
60
50
40
30
20
10
0
0.3
0.01
0.1
1
10
-5
DUTY CYCLE DESENDING ORDER
0.4
0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
V
SD
Figure 10. Normalized Transient Thermal Impedance, Junction to Case
, SOURCE TO DRAIN VOLTAGE (V)
0.5
Diode Current
T
J
= 175
0.6
Figure 9. Maximum Drain Current vs Case Temperature
o
C
10
0.7
-
4
(Continued)
50
40
30
20
10
0
0.8
25
t1, RECTANGULAR PULSE DURATION (S)
0.9
50
T
J
= 25
TC, CASE TEMPERATURE (°C)
1.0
o
10
C
-3
75
1.1
100
200
100
Figure 8. Maximum Safe Operating Area
10
1
1
125
TC = 25
10
-2
VDS, DRAIN TO SOURCE VOLTAGE (V)
OPERATION IN THIS AREA
LIMITED BY RDS(ON)
o
C
150
10
175
DUTY FACTOR, D = t1 / t2
PEAK TJ = (PD X Z JC X R JC) + TC
PD
10
-1
t1
t2
100
FDH44N50 Rev. A4, August 2002
10ms
1ms
100µs
DC
1000
10
0