FDH44N50 Fairchild Semiconductor, FDH44N50 Datasheet - Page 3

• Manufacturer Part Number: FDH44N50
• Description: MOSFET N-CH 500V 44A TO-247
• Manufacturer: Fairchild Semiconductor

Specifications of FDH44N50

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 120 mOhm @ 22A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 44A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 108nC @ 10V
• Input Capacitance (ciss) @ Vds: 5335pF @ 25V
• Power - Max: 750W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.12 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 11 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 44 A
• Power Dissipation: 750000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2002 Fairchild Semiconductor Corporation
Typical Characteristic
Figure 5. Capacitance vs Drain To Source Voltage
500
100
10000
160
140
120
100
1000
10
80
60
40
20
100
1
0
3.0
1
10
VGS DESCENDING
5.5V
4.5V
Figure 3. Transfer Characteristics
10V
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
VDD = 80V
1
TJ = 25
Figure 1. Output Characteristics
VGS = 0V, f = 1MHz
8V
6V
5V
3.5
VDS, DRAIN TO SOURCE VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
o
VDS, DRAIN TO SOURCE VOLTAGE (V)
C
4.0
TJ = 175
4.5
10
o
10
C
5.0
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
CISS
COSS
CRSS
5.5
TJ = 25
o
C
6.0
100
100
6.5
Figure 6. Gate Charge Waveforms For Constant
200
100
Figure 4. Normalized Drain To Source On
3
2
1
0
-50
16
12
10
8
4
0
1
0
1
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
Resistance vs Junction Temperatrue
VGS DESCENDING
ID = 44A
TJ = 175
6.5V
5.5V
4.5V
10V
Figure 2. Output Characteristics
6V
5V
4V
-25
VDS, DRAIN TO SOURCE VOLTAGE (V)
25
o
TJ, JUNCTION TEMPERATURE (
C
0
Qg, GATE CHARGE (nC)
Gate Current
25
50
50
10
75
75
100V
250V
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
VGS = 10V, ID = 22A
100
100
FDH44N50 Rev. A4, August 2002
400V
125
o
C)
125
150
100
175
150