FQPF13N50CF Fairchild Semiconductor, FQPF13N50CF Datasheet - Page 5

• Manufacturer Part Number: FQPF13N50CF
• Description: MOSFET N-CH 500V 13A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: FRFET™r

Specifications of FQPF13N50CF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 540 mOhm @ 6.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 13A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 56nC @ 10V
• Input Capacitance (ciss) @ Vds: 2055pF @ 25V
• Power - Max: 48W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.54 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 15 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 13 A
• Power Dissipation: 48000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FQP13N50CF / FQPF13N50CF Rev. A1
Typical Performance Characteristics
Figure 11-2. Transient Thermal Response Curve for FQPF13N50CF
Figure 11-1. Transient Thermal Response Curve for FQP13N50CF
1 0
1 0
1 0
1 0
1 0
1 0
-1
-2
-1
-2
0
1 0
0
1 0
-5
-5
D = 0 .5
D = 0 .5
0 .0 5
0 .0 2
0 .0 1
0 .2
0 .1
0 .0 5
0 .2
0 .0 2
0 .0 1
0 .1
s in g le p u ls e
1 0
1 0
s in g le p u ls e
-4
-4
t
t
1
1
, S q u a re W a v e P u ls e D u ra tio n [s e c ]
, S q u a re W a v e P u ls e D u ra tio n [s e c ]
1 0
1 0
-3
-3
(Continued)
5
1 0
1 0
-2
-2
※
1 0
1 0
P
※
1 . Z
2 . D u ty F a c to r, D = t
3 . T
DM
N o te s :
-1
-1
1 . Z
2 . D u ty F a c to r, D = t
3 . T
P
N o te s :
DM
θ J C
J M
θ J C
J M
- T
(t) = 0 .6 4
- T
(t) = 2 .5 8
C
t
= P
C
1
t
= P
2
t
D M
1
t
1 0
1 0
D M
2
℃
* Z
℃
* Z
0
0
/W M a x .
1
/t
θ J C
/W M a x .
1
2
θ J C
/t
(t)
2
(t)
1 0
1 0
1
1
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