FQPF13N50CF Fairchild Semiconductor, FQPF13N50CF Datasheet - Page 4

• Manufacturer Part Number: FQPF13N50CF
• Description: MOSFET N-CH 500V 13A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: FRFET™r

Specifications of FQPF13N50CF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 540 mOhm @ 6.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 13A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 56nC @ 10V
• Input Capacitance (ciss) @ Vds: 2055pF @ 25V
• Power - Max: 48W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.54 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 15 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 13 A
• Power Dissipation: 48000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FQP13N50CF / FQPF13N50CF Rev. A1
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
Figure 9-1. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
10
10
10
10
10
10
-1
-2
14
12
10
3
2
1
0
10
8
6
4
2
0
25
0
1.2
1.1
1.0
0.9
0.8
-100
vs. Temperature
vs. Case Temperature
for FQP13N50CF
50
-50
* Notes :
1. T
2. T
3. Single Pulse
Operation in This Area
is Limited by R
C
J
= 150
= 25
V
T
T
DS
C
J
10
, Case Temperature [ ]
, Junction Temperature [
o
, Drain-SourceVoltage[V]
C
o
0
1
C
75
DS(on)
50
100
DC
℃
100ms
100
o
10
10ms
C]
2
※
1. V
2. I
125
Notes :
1ms
D
G S
= 250 µA
= 0 V
150
100
10
µ
s
µ
s
150
200
(Continued)
10
3
4
Figure 8. On-Resistance Variation
Figure 9-2. Maximum Safe Operating Area
10
10
10
10
10
10
-1
-2
3
2
1
0
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
-100
for FQPF13N50CF
vs. Temperature
-50
* Notes :
1. T
2. T
3. Single Pulse
Operation in This Area
is Limited by R
C
J
= 150
= 25
V
T
DS
J
, Junction Temperature [
10
o
0
, Drain-SourceVoltage[V]
C
o
C
1
DS(on)
50
DC
100ms
100
o
C]
10ms
10
2
1ms
※
1. V
2. I
Notes :
150
D
www.fairchildsemi.com
100
GS
= 6.5 A
= 10 V
µ
10
s
µ
s
200
10
3