FDFS2P106A Fairchild Semiconductor, FDFS2P106A Datasheet - Page 5

• Manufacturer Part Number: FDFS2P106A
• Description: MOSFET P-CH 60V 3A 8-SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDFS2P106A

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 110 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 21nC @ 10V
• Input Capacitance (ciss) @ Vds: 714pF @ 30V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.11 Ohms
• Forward Transconductance Gfs (max / Min): 8 S
• Drain-source Breakdown Voltage: - 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: - 3 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDFS2P106ATR; FDFS2P106A_NL; FDFS2P106A_NLTR; FDFS2P106A_NLTR

Typical Characteristics
0.001
Figure 9. Schottky Diode Forward Voltage.
0.01
0.1
0.01
10
10
0.1
Figure 7. Gate Charge Characteristics.
8
6
4
2
0
1
1
0
0.001
0
I
D
= -3A
0.1
D = 0.5
T
0.2
3
J
0.1
= 125
0.2
0.05
V
F
0.02
, FORWARD VOLTAGE (V)
o
C
Q
0.01
g
0.3
, GATE CHARGE (nC)
0.01
6
SINGLE PULSE
0.4
Figure 11. Transient Thermal Response Curve.
T
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
9
J
0.5
= 25
V
DS
o
C
= -20V
-40V
0.6
0.1
12
0.7
-30V
15
0.8
1
1.00E-01
1.00E-02
1.00E-03
1.00E-04
1.00E-05
1.00E-06
1.00E-07
1.00E-08
Figure 10. Schottky Diode Reverse Current.
1000
800
600
400
200
Figure 8. Capacitance Characteristics.
0
0
0
10
10
-V
DS
5
V
, DRAIN TO SOURCE VOLTAGE (V)
R
, REVERSE VOLTAGE (V)
20
C
C
C
ISS
OSS
RSS
T
J
T
P(pk)
= 125
J
= 25
Duty Cycle, D = t
10
30
T
R
R
J
o
JA
o
- T
C
C
JA
100
(t) = r(t) + R
A
= 135 °C/W
t
1
= P * R
t
2
40
15
FDFS2P106A Rev B(W)
JA
1
JA
(t)
/ t
V
f = 1MHz
50
GS
2
= 0 V
1000
20
60