FDFS2P106A Fairchild Semiconductor, FDFS2P106A Datasheet - Page 2

• Manufacturer Part Number: FDFS2P106A
• Description: MOSFET P-CH 60V 3A 8-SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDFS2P106A

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 110 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 21nC @ 10V
• Input Capacitance (ciss) @ Vds: 714pF @ 30V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.11 Ohms
• Forward Transconductance Gfs (max / Min): 8 S
• Drain-source Breakdown Voltage: - 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: - 3 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDFS2P106ATR; FDFS2P106A_NL; FDFS2P106A_NLTR; FDFS2P106A_NLTR

Electrical Characteristics
Symbol
Off Characteristics
BV
I
I
I
On Characteristics
V
R
I
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain–Source Diode Characteristics and Maximum Ratings
I
V
DSS
GSSF
GSSR
D(on)
d(on)
r
d(off)
f
S
BV
V
FS
GS(th)
SD
DS(on)
iss
oss
rss
g
gs
gd
GS(th)
DSS
T
T
DSS
J
J
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
Parameter
(Note 2)
(Note 2)
V
I
V
V
V
V
I
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
T
D
D
A
GS
DS
GS
GS
DS
GS
GS
GS
GS
DS
DS
DD
GS
DS
GS
GS
= –250 A, Referenced to 25 C
= –250 A,Referenced to 25 C
= 25°C unless otherwise noted
= –48 V,
= V
= –5 V,
= –30 V,
= –30V,
= 0 V,
= 20V,
= –20 V
= –10 V,
= –4.5 V, I
= –10 V, I
= –10 V,
= –30 V,
= –10 V,
= –10 V
= 0 V,
Test Conditions
GS
,
I
S
D
= –1.3 A
I
V
V
V
I
I
V
I
V
I
R
I
= –3 A, T
D
D
D
D
D
D
D
GS
DS
DS
DS
GEN
GS
= –250 A
= –250 A
= –3A
= –2.7 A
= –3.3 A
= –1 A,
= –3A,
= 0 V
= 0 V
= 0 V
= –5 V
= 0 V,
= 6
J
=125 C
(Note 2)
–60
Min
–10
–1
Typ Max Units
–1.6
–0.8
–60
112
150
714
8.5
91
84
33
11
28
15
4
8
8
2
3
–100
–1.3
–1.2
100
110
140
192
–1
–3
15
19
45
17
21
FDFS2P106A Rev B(W)
mV/ C
mV/ C
m
nC
nC
nC
nA
nA
pF
pF
pF
ns
ns
ns
ns
V
V
A
S
A
V
A