FDFS2P106A Fairchild Semiconductor, FDFS2P106A Datasheet - Page 4

• Manufacturer Part Number: FDFS2P106A
• Description: MOSFET P-CH 60V 3A 8-SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDFS2P106A

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 110 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 21nC @ 10V
• Input Capacitance (ciss) @ Vds: 714pF @ 30V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.11 Ohms
• Forward Transconductance Gfs (max / Min): 8 S
• Drain-source Breakdown Voltage: - 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: - 3 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDFS2P106ATR; FDFS2P106A_NL; FDFS2P106A_NLTR; FDFS2P106A_NLTR

Typical Characteristics
1.8
1.6
1.4
1.2
0.8
0.6
0.4
10
10
Figure 3. On-Resistance Variation with
8
6
4
2
0
2
1
8
6
4
2
0
Figure 1. On-Region Characteristics.
-50
0
1
Figure 5. Transfer Characteristics.
V
-6.0V
GS
V
I
GS
= -10V
D
V
-25
DS
= -3A
= -10V
1.5
= -5V
1
-4.5V
-V
T
-V
0
J
GS
, JUNCTION TEMPERATURE (
DS
Temperature.
, GATE TO SOURCE VOLTAGE (V)
, DRAIN-SOURCE VOLTAGE (V)
2
-3.5V
25
2
2.5
50
T
A
= -55
3
75
-3.0V
3
o
C
-2.5V
100
o
C)
125
4
3.5
o
125
C
25
o
C
150
5
4
Figure 6. Body Diode Forward Voltage Variation
0.0001
0.001
0.29
0.24
0.19
0.14
0.09
0.04
0.01
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
100
with Source Current and Temperature.
2.2
1.8
1.6
1.4
1.2
0.8
0.1
10
2
1
1
0
2
0
Drain Current and Gate Voltage.
T
V
A
V
GS
= 25
GS
Gate-to-Source Voltage.
= -3.0V
= 0V
0.2
o
-V
C
SD
2
-V
, BODY DIODE FORWARD VOLTAGE (V)
4
GS
-3.5V
, GATE TO SOURCE VOLTAGE (V)
T
- I
A
0.4
D
= 125
, DRAIN CURRENT (A)
-4.0V
4
o
C
0.6
6
-4.5V
T
25
A
= 125
o
C
6
0.8
o
C
-6.0V
-55
o
8
C
FDFS2P106A Rev B(W)
8
I
A
D
1
= -1.5A
-10V
10
1.2
10