RFD3055LE Fairchild Semiconductor, RFD3055LE Datasheet - Page 4

• Manufacturer Part Number: RFD3055LE
• Description: MOSFET N-CH 60V 11A I-PAK
• Manufacturer: Fairchild Semiconductor
• Type: Power MOSFETr

Specifications of RFD3055LE

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 107 mOhm @ 8A, 5V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 11.3nC @ 10V
• Input Capacitance (ciss) @ Vds: 350pF @ 25V
• Power - Max: 38W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.107 Ohm @ 5 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 11 A
• Power Dissipation: 38000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.107Ohm
• Drain-source On-volt: 60V
• Gate-source Voltage (max): ±16V
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: IPAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2002 Fairchild Semiconductor Corporation
Typical Performance Curves
NOTE: Refer to Fairchild Application Notes AN9321 and AN9322
150
100
15
12
100
FIGURE 10. SWITCHING TIME vs GATE RESISTANCE
50
10
9
6
3
0
0.001
0
1
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
2
0
T
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
V
FIGURE 8. TRANSFER CHARACTERISTICS
J
STARTING T
DD
V
If R = 0
t
If R ≠ 0
t
= 175
AV
AV
T
GS
J
= 15V
R
= 25
= (L)(I
= (L/R)ln[(I
= 4.5V, V
GS
o
C
, GATE TO SOURCE RESISTANCE (Ω)
o
10
V
C
GS
0.01
AS
J
t
, GATE TO SOURCE VOLTAGE (V)
)/(1.3*RATED BV
AV
DD
= 150
AS
, TIME IN AVALANCHE (ms)
3
= 30V, I
*R)/(1.3*RATED BV
T
o
J
C
20
= -55
D
0.1
o
= 8A
C
DSS
30
STARTING T
- V
DD
DSS
4
Unless Otherwise Specified (Continued)
)
- V
1
DD
40
J
) +1]
= 25
t
d(OFF)
t
d(ON)
t
r
t
o
f
C
10
50
5
FIGURE 11. NORMALIZED DRAIN TO SOURCE ON
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
15
12
9
6
3
0
2.5
2.0
1.5
1.0
0.5
0
150
120
90
60
-80
V
V
FIGURE 7. SATURATION CHARACTERISTICS
GS
GS
2
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
I
= 5V
= 10V
D
T
C
VOLTAGE AND DRAIN CURRENT
RESISTANCE vs JUNCTION TEMPERATURE
= 3A
-40
= 25
V
DS
o
T
V
C
1
J
GS
, DRAIN TO SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (
4
, GATE TO SOURCE VOLTAGE (V)
0
I
D
= 11A
I
D
RFD3055LE, RFD3055LESM, RFP3055LE Rev. B
= 5A
40
2
6
T
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
C
80
= 25
V
o
C
GS
120
= 10V, I
o
3
8
C)
V
V
GS
V
GS
160
GS
D
= 4V
= 11A
= 3.5V
= 3V
200
10
4