RFD3055LE Fairchild Semiconductor, RFD3055LE Datasheet - Page 2

• Manufacturer Part Number: RFD3055LE
• Description: MOSFET N-CH 60V 11A I-PAK
• Manufacturer: Fairchild Semiconductor
• Type: Power MOSFETr

Specifications of RFD3055LE

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 107 mOhm @ 8A, 5V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 11.3nC @ 10V
• Input Capacitance (ciss) @ Vds: 350pF @ 25V
• Power - Max: 38W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.107 Ohm @ 5 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 11 A
• Power Dissipation: 38000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.107Ohm
• Drain-source On-volt: 60V
• Gate-source Voltage (max): ±16V
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: IPAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2002 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
Drain to Gate Voltage (R
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .E
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Maximum Temperature for Soldering
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
Electrical Specifications
Source to Drain Diode Specifications
NOTES:
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 5V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
Source to Drain Diode Voltage
Diode Reverse Recovery Time
1. T
2. Pulse Test: Pulse Width ≤ 300ms, Duty Cycle ≤ 2%.
3. Repetitive Rating: Pulse Width limited by max junction temperature. See Transient Thermal Impedance Curve (Figure 3) and Peak Current
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
Derate Above 25
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Capability Curve (Figure 5).
J
= 25
o
C to 150
PARAMETER
PARAMETER
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
o
C.
GS
= 20k Ω ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . V
T
C
= 25
T
C
= 25
o
C, Unless Otherwise Specified
o
C, Unless Otherwise Specified
SYMBOL
SYMBOL
V
r
Q
BV
t
Q
DS(ON)
t
d(OFF)
C
C
GS(TH)
Q
R
R
I
I
d(ON)
C
t
g(TOT)
DSS
GSS
t
OFF
V
g(TH)
OSS
RSS
ON
g(5)
θ JC
ISS
θ JA
DSS
t
t
t
SD
r
f
rr
I
V
V
V
V
I
V
V
(Figures 10, 18, 19)
V
V
V
V
(Figure 14)
TO-220AB
TO-251AA, TO-252AA
I
I
D
D
SD
SD
GS
DS
DS
GS
DD
GS
GS
GS
GS
DS
= 250 µ A, V
= 8A, V
= 8A
= 8A, dI
= 55V, V
= 50V, V
= 25V, V
= V
= ± 16V
≈
= 4.5V, R
= 0V to 10V
= 0V to 5V
= 0V to 1V
30V, I
DS
GS
, I
SD
D
D
TEST CONDITIONS
GS
GS
GS
= 5V (Figure 11)
J
GS
TEST CONDITIONS
GS
, T
/dt = 100A/ µ s
= 8A,
= 250 µ A
DGR
= 0V
= 0V, T
= 0V, f = 1MHz
DSS
STG
= 0V
= 32 Ω
pkg
DM
GS
AS
D
D
L
C
V
I
(Figures 20, 21)
g(REF)
DD
= 150
= 30V, I
o
RFD3055LE, RFD3055LESM,
= 1.0mA
Refer to Peak Current Curve
C
D
Refer to UIS Curve
= 8A,
RFP3055LE
-55 to 175
RFD3055LE, RFD3055LESM, RFP3055LE Rev. B
0.25
± 16
300
260
60
60
11
38
MIN
MIN
60
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP
0.36
105
350
105
9.4
5.2
TYP
22
39
23
8
-
-
-
-
-
-
-
-
-
-
-
-
-
0.107
MAX
± 100
11.3
0.43
3.94
MAX
250
170
100
1.25
6.2
92
62
66
3
1
-
-
-
-
-
-
-
-
UNITS
W/
o
o
o
W
UNITS
UNITS
V
V
V
A
o
o
o
C
C
C
o
C/W
C/W
C/W
µ A
µ A
nA
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
ns
C
ns
Ω
V
V
V